Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

2020 ◽  
Vol 13 (2) ◽  
pp. 026504 ◽  
Author(s):  
Daigo Kikuta ◽  
Kenji Ito ◽  
Tetsuo Narita ◽  
Tetsu Kachi
Keyword(s):  
Post Deposition Annealing ◽  
Gate Oxides ◽  
Mos Devices ◽  
Post Deposition

OHMIC CONTACTS TO SIC

2005 ◽  
Vol 15 (04) ◽  
pp. 781-820 ◽  
Author(s):  
FABRIZIO ROCCAFORTE ◽  
FRANCESCO LA VIA ◽  
VITO RAINERI
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Measurement Techniques ◽  
Resistance Measurement ◽  
Post Deposition Annealing ◽  
Simultaneous Formation ◽  
Mos Devices ◽  
Basic Concepts ◽  
P Type ◽  
Post Deposition

In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 Ω cm 2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni -based and Al/Ti -based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.

scholarly journals Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

2020 ◽  
Vol 8 ◽  
pp. 970-975 ◽  
Author(s):  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
Hepeng Zhang ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interfacial Property ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

Control of crystal structure, morphology and optical properties of ceria films by post deposition annealing treatments

2016 ◽  
Vol 603 ◽  
pp. 363-370 ◽  
Author(s):  
Asmaa Eltayeb ◽  
Rajani K. Vijayaraghavan ◽  
Anthony P. McCoy ◽  
Joseph Cullen ◽  
Stephen Daniels ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Post Deposition Annealing ◽  
Structure Morphology ◽  
Post Deposition

scholarly journals Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

2009 ◽  
Author(s):  
Wei-En Fu ◽  
Yong-Qing Chang ◽  
Yi-Ching Chen ◽  
Erik M. Secula ◽  
David G. Seiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

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