D-19 Combining 2D and Point Detectors for Rapid and High-Resolution High-Energy X-ray Diffraction of Powders and Single Crystals in Multiple Sample Environments

2007 ◽  
Vol 22 (2) ◽  
pp. 189-189
Author(s):  
Y. Ren
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Multiple Sample

Ion Implantation Defect Characterization by High-Resolution X-Ray Diffraction

1992 ◽  
Vol 262 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Tom W. Ryan
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Lattice Strain ◽  
Crystalline Silicon ◽  
High Energy ◽  
Silicon Sample ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Defect

ABSTRACTHigh-energy ion-implantation is one of the roost critical processing steps regarding the formation of defects in mono-crystalline silicon. High- as well as low-doses implanted at various energies can result in relatively high residual defect concentrations after post-implantation annealing.Before annealing, the crystal lattice strain is mainly caused by the point defects. After annealing, the accommodation of substitutional impurities is the main origin of the residual lattice strain. High-Resolution X-ray Diffraction (HRXD) has been frequently used for the characterization of these structures. Dislocation loops formed during the high temperature step, however, cause enhanced diffuse X-ray scattering, which can dominate the measured X-ray intensity in conventional HRXD.Triple axis diffractometry is used in this study to analyze the size, type and location of defects in a boron implanted and rapid thermally annealed silicon sample.

High-resolution X-ray diffraction investigation on the evolution of the substructure of individual austenite grains in TRIP steels during tensile deformation

2014 ◽  
Vol 47 (3) ◽  
pp. 965-973 ◽  
Author(s):  
Romain Blondé ◽  
Enrique Jimenez-Melero ◽  
Richard Huizenga ◽  
Lie Zhao ◽  
Jonathan Wright ◽  
...  
Keyword(s):  
Martensitic Transformation ◽  
High Resolution ◽  
Tensile Deformation ◽  
Subgrain Size ◽  
High Energy ◽  
Uniaxial Tensile ◽  
X Ray Diffraction ◽  
X Ray ◽  
Trip Steels ◽  
Austenite Grains

The martensitic transformation behaviour of the metastable austenite phase in low-alloyed transformation-induced plasticity (TRIP) steels has been studiedin situusing high-energy X-ray diffraction during deformation. The austenite stability during tensile deformation has been evaluated at different length scales. A powder diffraction analysis has been performed to correlate the macroscopic behaviour of the material to the observed changes in the volume phase fraction. Moreover, the austenite deformation response has been studied at the length scale of individual grains, where an in-depth characterization of four selected grains has been performed, including grain volume, local carbon concentration and grain orientation. For the first time, a high-resolution far-field detector was used to study the initial and evolving structure of individual austenite grains during uniaxial tensile deformation. It was found that the austenite subgrain size does not change significantly during tensile deformation. Most austenite grains show a complete martensitic transformation in a single loading step.

Recrystallization of AA1050 Studied by 3DXRD

2006 ◽  
Vol 519-521 ◽  
pp. 1569-1578
Author(s):  
Dorte Juul Jensen
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Nucleation And Growth ◽  
X Rays ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
3 Dimensional ◽  
Kinetics Of

By 3 dimensional X-ray diffraction (3DXRD) using high energy X-rays from synchrotron sources it is possible to study in-situ the nucleation and growth during recrystallization. In this paper it is described and discussed how 3DXRD can supplement EBSP measurements of nucleation and growth. Three types of studies are considered: i) orientation relationships between nuclei and parent deformed matrix, ii) recrystallization kinetics of individual bulk grains and iii) filming of growing grains in deformed single crystals.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

High-Resolution X-Ray Microstructural Study of Single Crystals of YBa2Cu3O7-y

1987 ◽  
Vol 99 ◽  
Author(s):  
Hoydoo You ◽  
J. D. Axe ◽  
X. B. Kan ◽  
S. C. Moss ◽  
J. Z. Liu ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
Single Crystals ◽  
Growth Conditions ◽  
High Energy ◽  
Synchrotron Source ◽  
Microstructural Study ◽  
X Ray ◽  
Oxygen Ordering ◽  
New Type

ABSTRACTSingle crystals of YBa2Cu3O7-y were studied by transmission Laue photography and monochromatic diffraction techniques, using the Cornell High Energy Synchrotron Source and a rotating anode x-ray source. A new type of twinning, with two orthorhombic domains rotated exactly 90 degree about the c axis, was observed in one sample and the conventional (110) type twinning in another sample with nominally identical growth conditions. A high resolution diffraction study of the sample with the conventional (110) twinning shows that measured orthorhombicity (proportional to oxygen ordering parameter) varies from one domain to another.

Crystallization kinetics and high-resolution X-ray diffraction analysis on nonlinear optical l-threonine single crystals

2007 ◽  
Vol 61 (27) ◽  
pp. 4932-4936 ◽  
Author(s):  
G. Ramesh Kumar ◽  
S. Gokul Raj ◽  
Thenneti Raghavalu ◽  
V. Mathivanan ◽  
M. Kovendhan ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Analysis ◽  
Single Crystals ◽  
Crystallization Kinetics ◽  
Nonlinear Optical ◽  
X Ray Diffraction ◽  
X Ray
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