scholarly journals Magnetic and Electric Properties of AmorphousCo40Fe40B20Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Yuan-Tsung Chen ◽  
S. M. Xie
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Spin Exchange ◽  
Amorphous State ◽  
Magnetic Memory ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
Diffraction Patterns ◽  
Plane View

C40Fe40B20was deposited on a glass substrate to a thickness (tf) of between 100 Å and 500 Å. X-ray diffraction patterns (XRD) indicate thatC40Fe40B20films are in an amorphous state. The plane-view microstructures and grain size distributions of CoFeB thin films are observed under a high-resolution transmission electron microscope (HRTEM). The thicker CoFeB films have larger grain size distribution than thinner CoFeB films. The saturation magnetization (Ms) exhibits a size effect, meaning thatMsincreases astfincreases. The magnetic remanence magnetization (Mr) of CoFeB thin films are sensitive to thinner CoFeB films, and the refined grain size of thinner CoFeB films can induce ferromagnetic stronger spin exchange-coupling behavior than thicker CoFeB films, resulting in higher remanence. The highest magnetic squareness ratio (Mr/Ms) of the CoFeB films occurs at thickness of 100 Å, suggesting the 100 Å of the as-deposited CoFeB film is suitable for magnetic memory application. These results also demonstrate that coercivity (Hc) is increased by an increase in the width of the distribution of grain sizes. The electrical resistivity (ρ) of such a film is typically higher than normally exceeding 100 μΩ cm, revealing that the amorphous phase dominates. These results are consistent with the XRD results.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

scholarly journals Effect of Aqueous Solution Molarity on the Structural and Electrical Properties of Spray Pyrolysed Lead Sulfide (PbS) Thin Films

2015 ◽  
Vol 57 ◽  
pp. 122-125 ◽  
Author(s):  
Mohammad Ghaffar Faraj
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Lead Sulfide ◽  
Chemical Spray Pyrolysis ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Scherrer Formula

Lead sulfide (PbS) thin films of different molarities (0.05 M, 0.075 M and 0.1 M) were prepared on glass substrates at 325 °C by chemical spray pyrolysis (CSP) technique. X-ray diffraction patterns confirm the proper phase formation of the PbS. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure with preferential reflection of (200) plane. The crystallite grain size was calculated using Scherrer formula and it is found that the 0.1M has maximum crystallite grain size (37.4 nm). Depending on the molarity, Hall measurement showed that the electrical resistivity and mobility at room temperature varied in the range 6.3x103Ω.cm to 2.1x103Ω.cm and 4.79cm2/V.S to 24.3 cm2/V.S.

Monocrystalline and Polycrystalline Thin Films Formed by Cobalt Ion Implantation in the Organic Substrate (Polyester)

1994 ◽  
Vol 343 ◽  
Author(s):  
A. L. Stepanov ◽  
R. I. Khaibullin ◽  
S. N. Abdullin ◽  
Yu. N. Osin ◽  
I. B. Khaibullin
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Ion Implantation ◽  
Amorphous State ◽  
Organic Substrate ◽  
Crystalline Lattice ◽  
Cobalt Ion ◽  
Polycrystalline Thin Films ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTThe structure and phase composition of thin films formed by 40 KeV cobalt ion implantation into organic substrate (polyester) were studied by transmission electron microscopy in conjunction with electron diffraction. Varying current density and dose implantation over the range 0.3×1016 – 2.4×1017 cm-2 we obtained island-like cobalt films of different type as well as labyrinth-like structure at the highest dose value. The granulometric and morphologic parameters were derived from the micrographs of the investigated films. Both amorphous state and α-Co crystalline lattice of cobalt granules were established from electron diffraction patterns of synthesized films. Along with discontinuous films, we formed monocrystalline plates of α-phase cobalt under the determined implantation regimes and conditions. Cross-section images of synthesized films showed that films are of about 300 Å thick and buried at the depth of 150 Å from the principal surface of the polyester.

Preparation and Microstructural Characterization of Ferroelectric Thin Film PbTiO3 on Si, MgO, and Sapphire Deposited by DC Reactive Multitarget Co-Sputtering.

1991 ◽  
Vol 243 ◽  
Author(s):  
K.Y. Kim ◽  
H.I. Hwang ◽  
J.Y. Lee ◽  
W.K. Choo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Ferroelectric Thin Film ◽  
Microstructural Characterization ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Composition And Structure ◽  
Plane View

AbstractPbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal structure and microstructure of PbTiO3 thin film deposited on Si at low substrate temperature of 200°C were examined as a fuction of post-annealing temperature by X-ray diffraction and transmission electron microscopy.The ferroelectric domain configurations were analyzed by plane-view TEM. The preferred orientation of PbTiO3 thin films deposited on MgO (100) and sapphire (1102) at high substrate temperature of 520°C were also examined.

Substructure Measurements by Statistical Fluctuations in X-Ray Diffraction Intensity

1965 ◽  
Vol 9 ◽  
pp. 74-90 ◽  
Author(s):  
E. F. Sturcken ◽  
W. E. Gettys ◽  
E. M. Bohn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
Laue Diffraction ◽  
X Ray ◽  
Statistical Fluctuations ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractThe substructures of a bet a-quenched and a recrystallized form of high-purity uranium were measured by a method based on statistical fluctuations in X-ray diffraction intensity. For these measurements, Warren's statistical equation for determining grain size was modified to make the equation applicable to materials with high absorption coefficients or moderate-to-large grain size ( > 20 microns) or both, since many metals fall into this category, and to allow for defocusing of the X-ray beam which occurs as a natural consequence of the experiment.The beta-quenched uranium was found to have numerous subgrains with a range of misorientation angles that was smaller and larger than the limits of the X-ray measurements (Ω = 10−4 to 10−2 steradians). The presence of the large subgrains was corroborated by optical microscopy. The presence of very small subgrains was corroborated by transmission electron microscopy which showed 0.1- to 1-micron subgrains relatively free of dislocations bounded by dense dislocation networks, and by micro Laue diffraction patterns (30-micron beam diameter) which showed partial rings similar to a powder pattern.The recrystallized uranium had no misorientation within the grains greater than 5.5 × 10−3 steradians. In contrast to the beta-quenched case, no subgrains were found either by transmission electron microscopy (TEM) or micro Laue diffraction patterns. The TEM micrographs showed a uniform distribution of dislocation networks. Since no other substructural elements were observed, the dislocations are believed to be the cause of the misorientation within the grains for solid angles of less than 5 × 10−3 steradiflns.These preliminary experiments show that the statistical method may be used in conjunction with transmission electron microscopy and micro Laue diffraction for the study of substructure. The statistical method gives quantitative data on “bulk” specimens that can be given a meaningful interpretation with the aid of the other techniques.

scholarly journals Annealing effects on the properties of tin thin films

2015 ◽  
Vol 9 (2) ◽  
pp. 67-71 ◽  
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Parameters ◽  
Electrical Characterization ◽  
Vacuum Furnace ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Annealing Effects ◽  
Tin Thin Films

The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ~8 nm/min. After deposition the samples were annealed for 1h at 600?C and 2h at 700?C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.

Microstructure and superconducting properties of Y–Ba–Cu–O and Yb–Ba–Cu–O thin films formed by metalorganic deposition

1989 ◽  
Vol 4 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
Y. L. Chen ◽  
J. V. Mantese ◽  
A. H. Hamdi ◽  
A. L. Micheli
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Size ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Metalorganic Deposition

Thin films of Y–Ba–Cu–O and Yb–Ba–Cu–O, 0.5–1.5 μm in thickness, were deposited onto (211) and (100) SrTiO3 single crystal substrates by metalorganic deposition (MOD). After deposition the samples were annealed either by conventional furnace annealing or rapid thermal annealing (RTA). The microstructures of these films were then characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive x-ray spectrometry (EDS). Grain size of the annealed films varied from 0.25 to 1.0 μm. Improved superconducting properties were found for the RTA samples, compared to furnace annealing, and were attributed to larger grain size, little strontium diffusion into the thin films from the substrate, and highly preferred orientation of the 1:2:3 phase.

Grain Growth in Al-(Cu, Pd, Nb) Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
J.D. Mis ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Weight Percent ◽  
Size Distributions ◽  
Precipitate Morphology ◽  
X Ray ◽  
Transmission Electron ◽  
Grain Size Distributions

AbstractThe microstructure of 1 μim thick Al films containing 0.5 and 2%Cu (weight percent), 0.3%Pd, and 0.3%Pd-0.3%Nb were investigated by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS) as a function of isochronal and isothermal anneals. The grain size, grain size distribution, and precipitate morphology of these films was measured from 200 to 500ºC, with the activation energy for grain growth (Ea) determined for I h anneals at 200, 300, 400 and 500ºC. Normal grain growth was recorded for the A1Cu films annealed at temperatures ≤400ºC; however secondary grain growth occurred in the AI-2Cu film annealed for I h at 500ºC, with grains as large as 16 μm in diameter observed. Grain growth in the AI-0.3Pd films resulted in strongly bi-modal grain size distributions, with the onset ofsignificant grain growth retarded for I h anneals at temperatures ≤300ºC.The addition of Nb to the AI-0.3Pd film resulted in monomodal grain size distributions over the entire temperature range. The role of crystallographic texture on grain growth in thin films is discussed.

Growth temperature dependence of crystal symmetry in Nb-doped BaTiO3 thin films

2013 ◽  
Vol 03 (02) ◽  
pp. 1350009 ◽  
Author(s):  
Young Heon Kim ◽  
Xubing Lu ◽  
Marco Diegel ◽  
Roland Mattheis ◽  
Dietrich Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Defect Density ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Threading Defects ◽  
Tetragonal Phase Transition

Growth temperature effects on the microstructure of Nb -doped BaTiO 3 thin films of the composition BaTi 0.98 Nb 0.02 O 3 are studied using X-ray diffraction and transmission electron microscopy (TEM). Reciprocal space maps and electron diffraction patterns show that the a-axis lattice parameter increases and the c-axis parameter decreases with increasing growth temperature, indicating a decrease of tetragonality. Bright-field TEM images show low and high densities of threading defects in films grown at low and high temperatures, respectively. The observations are discussed in terms of a hindering of the cubic-to-tetragonal phase transition by a high defect density and a high unit cell volume.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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