Microstructure and superconducting properties of Y–Ba–Cu–O and Yb–Ba–Cu–O thin films formed by metalorganic deposition

1989 ◽  
Vol 4 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
Y. L. Chen ◽  
J. V. Mantese ◽  
A. H. Hamdi ◽  
A. L. Micheli
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Size ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Metalorganic Deposition

Thin films of Y–Ba–Cu–O and Yb–Ba–Cu–O, 0.5–1.5 μm in thickness, were deposited onto (211) and (100) SrTiO3 single crystal substrates by metalorganic deposition (MOD). After deposition the samples were annealed either by conventional furnace annealing or rapid thermal annealing (RTA). The microstructures of these films were then characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive x-ray spectrometry (EDS). Grain size of the annealed films varied from 0.25 to 1.0 μm. Improved superconducting properties were found for the RTA samples, compared to furnace annealing, and were attributed to larger grain size, little strontium diffusion into the thin films from the substrate, and highly preferred orientation of the 1:2:3 phase.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and superconducting properties of melt-grown Y–Ba–Cu–O superconductors

1996 ◽  
Vol 11 (10) ◽  
pp. 2406-2415 ◽  
Author(s):  
R. Gopalan ◽  
T. Rajasekharan ◽  
T. Roy ◽  
G. Rangarajan ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Field ◽  
Crack Width ◽  
Growth Process ◽  
Critical Radius ◽  
Radius Of Curvature ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

YBa2Cu3O7 (123) samples with varying Y2BaCuO5 (211) concentrations (0 mol%, 20 mol%, 28 mol%, and 50 mol%) were synthesized by the melt-growth process. Microstructural characterizations were done using x-ray diffraction (XRD), optical microscopy, scanning electron microscopy, and transmission electron microscopy (TEM). It was found that 123 platelet width, crack width between the platelets, and 211 particle size decreased systematically with increasing 211 concentration. TEM study showed that there is a critical radius of curvature (rc ≤ 0.2 μm-0.3 μm) of the 123/211 interface where defects/contrasts of strain field start to appear, and these defects are believed to be responsible for pinning the magnetic flux. Microhardness measurements showed that Vickers hardness (VHN) increases with increasing 211 content. Critical current density (Jc) values obtained from magnetization measurements using a SQUID magnetometer were found to increase in melt-grown samples by the addition of 211 content.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

Fine Tuning Magnetic Properties of FePt:C Thin Films by FePt UnderLayers

2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Magnetic Properties ◽  
Fine Tuning ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Research on Structural Properties of FePt: C Thin Films with FePt Underlayers

2013 ◽  
Vol 385-386 ◽  
pp. 7-10
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Properties ◽  
Structural Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown double-layered films were synthesized with a FePt: C composite layer on top of continuous FePt underlayer. The thickness of FePt was changed from 2 nm to 14 nm. Nanostructures, crystalline orientations and the effect of FePt underlayer on the ordering, orientation and magnetic properties of the thin films were investigated by transmission electron microscopy (TEM) and x-ray diffraction (XRD). XRD confirmed the formation of the ordered L10phase for 5 nm FePt: C film with FePt thickness decreased to 5 nm. TEM studies of FePt:C composite L10phase and double-layered deposition FePt:C/FePt were presented.

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