scholarly journals Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
R. Krishnan ◽  
C. David ◽  
P. K. Ajikumar ◽  
R. Nithya ◽  
S. Tripura Sundari ◽  
...  

Titanium nitride (TiN) thin films were deposited by reactive pulsed laser deposition (RPLD) technique. For the first time, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa. Grazing incidence-XRD (GI-XRD) confirmed the formation of predominantly nanocrystalline TiN phase with a crystallite size of around 30 nm. The hardness showed maximum value of ~30 GPa when the composition is near stoichiometric and the friction coefficient was found to be as low as 0.3. In addition, a systematic optical response was observed as a function of deposition pressure from the surface of the TiN films using spectroscopic ellipsometry.

1998 ◽  
Author(s):  
Huidong Gu ◽  
Kang M. Leung ◽  
Jonathan C. Y. Chung ◽  
X. D. Han

2008 ◽  
Vol 8 (8) ◽  
pp. 4135-4140 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
A. Srivastava ◽  
S. K. Sahoo ◽  
P. Das ◽  
C. Mukherjee ◽  
...  

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.


2012 ◽  
Vol 260 ◽  
pp. 2-6 ◽  
Author(s):  
D. Craciun ◽  
N. Stefan ◽  
G. Socol ◽  
G. Dorcioman ◽  
E. McCumiskey ◽  
...  

Materials ◽  
2016 ◽  
Vol 9 (1) ◽  
pp. 38 ◽  
Author(s):  
Liviu Duta ◽  
George Stan ◽  
Adrian Popa ◽  
Marius Husanu ◽  
Sorin Moga ◽  
...  

Author(s):  
Talisha M. Haywood ◽  
Kwadwo M. Darkwa ◽  
Ram K. Gupta ◽  
Dhananjay Kumar

TiN thin films were deposited on pure titanium (99.9 %) and stainless steel (316L) substrates using the pulsed laser deposition (PLD) technique. PLD is a very versatile technique to deposit high quality films and it allows the stoichiometry transfer of a multi-component system from target to deposited film. The crystallographic orientation of the films was studied using the X-ray diffraction technique and the results showed that the films were polycrystalline with the (111) preferred orientation. The hydrophilic/hydrophobicity nature of the films was investigated using contact angle measurements and the results indicated that the TiN coated surfaces were hydrophilic (< 90°). Biocompatibility of the TiN thin films was characterized in terms of cell attachment of bone cells on the surfaces of the coatings. Human bone marrow stromal cells were cultured, seeded, stained and imaged using a fluorescent microscope. Results on the biological behavior of the TiN thin films suggest that TiN is a good biocompatible material and has great promises in biological applications.


1998 ◽  
Vol 541 ◽  
Author(s):  
M. Joseph ◽  
H. Tabata ◽  
T. Tkawai

AbstractThin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17 and 0.3 have been prepared on Si(100) substrate for the first time by pulsed laser deposition. These films are characterized for their structural, surface morphology and ferroelectric nature. A memory window of 1.2V has been observed in capacitance-voltage measurement.


2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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