Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties
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Titanium nitride (TiN) thin films were deposited by reactive pulsed laser deposition (RPLD) technique. For the first time, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa. Grazing incidence-XRD (GI-XRD) confirmed the formation of predominantly nanocrystalline TiN phase with a crystallite size of around 30 nm. The hardness showed maximum value of ~30 GPa when the composition is near stoichiometric and the friction coefficient was found to be as low as 0.3. In addition, a systematic optical response was observed as a function of deposition pressure from the surface of the TiN films using spectroscopic ellipsometry.
2013 ◽
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2001 ◽
Vol 11
(PR11)
◽
pp. Pr11-65-Pr11-69
2001 ◽
Vol 11
(PR11)
◽
pp. Pr11-133-Pr11-137
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