scholarly journals Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Sukjoon Hong ◽  
Junyeob Yeo ◽  
Wanit Manorotkul ◽  
Gunho Kim ◽  
Jinhyeong Kwon ◽  
...  
Keyword(s):  
Gold Electrode ◽  
Sensor Array ◽  
Low Cost ◽  
Nanowire Array ◽  
Hydrothermal Growth ◽  
Zno Nanowire ◽  
Uv Sensor ◽  
Uv Illumination ◽  
Rapid Fabrication ◽  
Facile Fabrication

We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at~15 μm size consists of individual nanowires with~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array.

scholarly journals Low-Cost, Large-Area, Facile, and Rapid Fabrication of Aligned ZnO Nanowire Device Arrays

2016 ◽  
Vol 8 (21) ◽  
pp. 13466-13471 ◽  
Author(s):  
Gerard Cadafalch Gazquez ◽  
Sidong Lei ◽  
Antony George ◽  
Hemtej Gullapalli ◽  
Bernard A. Boukamp ◽  
...  
Keyword(s):  
Low Cost ◽  
Zno Nanowire ◽  
Large Area ◽  
Rapid Fabrication ◽  
Nanowire Device

scholarly journals On-chip fabrication of lateral growth ZnO nanowire array UV sensor

2016 ◽  
Vol 65 (11) ◽  
pp. 118104
Author(s):  
Li Jiang-Jiang ◽  
Gao Zhi-Yuan ◽  
Xue Xiao-Wei ◽  
Li Hui-Min ◽  
Deng Jun ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Lateral Growth ◽  
Zno Nanowire ◽  
Uv Sensor ◽  
Chip Fabrication ◽  
On Chip

Effect of fabrication temperature on the manufacturability of lateral ZnO nanowire array UV sensor

2020 ◽  
Vol 63 (4) ◽  
pp. 668-674
Author(s):  
LiHuan Zhao ◽  
ZhiYuan Gao ◽  
Jie Zhang ◽  
LiWei Lu ◽  
HongDa Li
Keyword(s):  
Nanowire Array ◽  
Zno Nanowire ◽  
Uv Sensor

High Responsive ZnO Nanowire UV Sensor

2011 ◽  
Vol 299-300 ◽  
pp. 659-662 ◽  
Author(s):  
Lei Xin Meng ◽  
Lian Zhu Zhang
Keyword(s):  
Autonomous Navigation ◽  
Uv Light ◽  
Low Cost ◽  
Zno Nanowire ◽  
Uv Sensor ◽  
Working Principle ◽  
Photo Response ◽  
Reset Time ◽  
Uv Sensors ◽  
Visual Light

UV (ultraviolet) sensor is widely used in many fields such as missile early warning, spacecraft autonomous navigation, global positioning and so on. Comparing with other semiconductor based UV sensor, ZnO nanowire (NW) UV sensor have many unique advantages including visual light blind, biocompatible, low cost and so on. But, two main shortages, low photo response () and long recover time, embarrass the application of single wire ZnO UV sensor. In this paper, we introduce the working principle of ZnO NW UV sensor and expound some methods for increasing photo response, enhancing sensitivity and shortening response and reset time of ZnO NW UV sensor. Besides this, we introduce a kind of UV sensor fabricated by integrated ZnO NWs recently. The photo response of this UV sensors reaches the order of mA, when exposed to UV light at 4.5 mW/cm2. It also has perfect stability and reliability. Because of these properties, this new kind of UV sensors has a great potential for application.

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Amperometric sensor for ascorbic acid using a gold electrode modified with ZnO@SiO2 nanospheres

2016 ◽  
Vol 40 (10) ◽  
pp. 8438-8443 ◽  
Author(s):  
Sher Bahadar Khan ◽  
Md Sameer Ahmed ◽  
Abdullah M. Asiri
Keyword(s):  
Ascorbic Acid ◽  
Gold Electrode ◽  
Low Cost ◽  
Amperometric Sensor ◽  
Highly Sensitive ◽  
Sensitive Sensor

A highly sensitive sensor based on ZnO@SiO2 nanospheres has been developed for the detection of ascorbic acid. The developed sensor is very simple and has been fabricated using low cost materials.

scholarly journals A low-cost flexible pH sensor array for wound assessment

2016 ◽  
Vol 229 ◽  
pp. 609-617 ◽  
Author(s):  
Rahim Rahimi ◽  
Manuel Ochoa ◽  
Tejasvi Parupudi ◽  
Xin Zhao ◽  
Iman K. Yazdi ◽  
...  
Keyword(s):  
Sensor Array ◽  
Low Cost ◽  
Ph Sensor ◽  
Wound Assessment

On-Chip Fabrication of None-Dead-Volume Microtips for ESI-MS Applications

2007 ◽  
Vol 121-123 ◽  
pp. 611-614
Author(s):  
Che Hsin Lin ◽  
Jen Taie Shiea ◽  
Yen Lieng Lin
Keyword(s):  
Surface Tension ◽  
Low Cost ◽  
Microfluidic Channel ◽  
Dead Volume ◽  
Esi Ms ◽  
Rapid Fabrication ◽  
Chip Fabrication ◽  
Novel Method ◽  
On Chip ◽  
Highly Uniform

This paper proposes a novel method to on-chip fabricate a none-dead-volume microtip for ESI-MS applications. The microfluidic chip and ESI tip are fabricated in low-cost plastic based materials using a simple and rapid fabrication process. A constant-speed-pulling method is developed to fabricate the ESI tip by pulling mixed PMMA glue using a 30-μm stainless wire through the pre-formed microfluidic channel. The equilibrium of surface tension of PMMA glue will result in a sharp tip after curing. A highly uniform micro-tip can be formed directly at the outlet of the microfluidic channel with minimum dead-volume zone. Detection of caffeine, myoglobin, lysozyme and cytochrome C biosamples confirms the microchip device can be used for high resolution ESI-MS applications.

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