scholarly journals Wearout Reliability and Intermetallic Compound Diffusion Kinetics of Au and PdCu Wires Used in Nanoscale Device Packaging

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
C. L. Gan ◽  
E. K. Ng ◽  
B. L. Chan ◽  
F. C. Classe ◽  
T. Kwuanjai ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Semiconductor Device ◽  
Technical Information ◽  
Diffusion Kinetics ◽  
Nanoscale Device ◽  
Bga Packages ◽  
Fine Pitch ◽  
Ball Bonds ◽  
Reliability Performance ◽  
Kinetics Of

Wearout reliability and diffusion kinetics of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the HAST (with bias) and UHAST (unbiased HAST) wearout reliability performance of Au and PdCu wires used in fine pitch BGA packages. In-depth failure analysis has been carried out to identify the failure mechanism under various wearout conditions. Intermetallic compound (IMC) diffusion constants and apparent activation energies (Eaa) of both wire types were investigated after high temperature storage life test (HTSL). Au bonds were identified to have faster IMC formation, compared to slower IMC growth of PdCu. PdCu wire was found to exhibit equivalent or better wearout reliability margin compared to conventional Au wire bonds. Failure mechanisms of Au, Cu ball bonds post-HAST and UHAST tests are been proposed, and both Au and PdCu IMC diffusion kinetics and their characteristics are discussed in this paper.

scholarly journals Reliability Assessment and Activation Energy Study of Au and Pd-Coated Cu Wires Post High Temperature Aging in Nanoscale Semiconductor Packaging

2013 ◽  
Vol 135 (2) ◽  
Author(s):  
C. L. Gan ◽  
U. Hashim
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Semiconductor Device ◽  
Formation Rate ◽  
Technical Information ◽  
Ball Bond ◽  
Fine Pitch ◽  
Bga Package ◽  
Ball Bonds ◽  
Reliability Performance

Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the influence of wire type on the wearout reliability performance of Au and PdCu wire used in fine pitch BGA package after HTSL stress at various aging temperatures. Failure analysis has been conducted to identify the failure mechanism after HTSL wearout conditions for Au and PdCu ball bonds. Apparent activation energies (Eaa) of both wire types are investigated after HTSL test at 150 °C, 175 °C and 200 °C aging temperatures. Arrhenius plot has been plotted for each ball bond types and the calculated Eaa of PdCu ball bond is 0.85 eV and 1.10 eV for Au ball bond in 110 nm semiconductor device. Obviously Au ball bond is identified with faster IMC formation rate with IMC Kirkendall voiding while PdCu wire exhibits equivalent wearout and or better wearout reliability margin compare to conventional Au wirebond. Lognormal plots have been established and its mean to failure (t50) have been discussed in this paper.

scholarly journals Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
C. L. Gan ◽  
E. K. Ng ◽  
B. L. Chan ◽  
U. Hashim ◽  
F. C. Classe
Keyword(s):  
Success Factors ◽  
Bonding Parameters ◽  
Green Mold ◽  
Fine Pitch ◽  
Bga Package ◽  
Bond Interface ◽  
Ball Bonds ◽  
Cu Bonding ◽  
Reliability Performance ◽  
Intermetal Dielectric

Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST) reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper.

Kinetics of Methane-Oxidizing Biofilms for Degradation of Toxic Organics

1988 ◽  
Vol 20 (11-12) ◽  
pp. 167-173 ◽  
Author(s):  
S. E. Strand ◽  
R. M. Seamons ◽  
M. D. Bjelland ◽  
H. D. Stensel
Keyword(s):  
Chlorinated Hydrocarbons ◽  
Enzymatic Oxidation ◽  
Diffusion Kinetics ◽  
Toxic Compound ◽  
Biofilm Model ◽  
Uptake Rates ◽  
Substrate Diffusion ◽  
Toxic Organics ◽  
Competitive Substrate ◽  
Kinetics Of

The kinetics of methane-oxidizing bioreactors for the degradation of toxic organics are modeled. Calculations of the fluxes of methane and toxic chlorinated hydrocarbons were made using a biofilm model. The model simulated the effects of competition by toxics and mediane on their enzymatic oxidation by the methane monooxygenase. Dual-competitive-substrate/diffusion kinetics were used to model biofilm co-metabolism, integrating equations of the following form:where S1 and S2 are the local concentrations of methane and toxic compound, respectively, and r and K are the maximum uptake rates and Monod coefficients, and x is the distance into the biofilm.

Elastic Properties of Steps at Interphase Boundaries

1991 ◽  
Vol 238 ◽  
Author(s):  
G. J. Shiflet
Keyword(s):  
Energy Density ◽  
Elastic Properties ◽  
Mathematical Analysis ◽  
Strain Energy ◽  
Chemical Processes ◽  
Diffusion Kinetics ◽  
Interphase Boundaries ◽  
Kinetics Of ◽  
Maximum Stresses

ABSTRACTStresses are introduced in crystals at interphase boundaries where steps improve the registry of atoms. A model and mathematical analysis based on an approach previously taken by van der Merwe and Shiflet1–4 of the problem incorporating a coherent step are presented. Computed distributions of stresses, strains, dilatation and energy density in the form of contours and nets are given for a coherent monatomic step. It is concluded that the maximum stresses are quite large and the fields decay fairly rapidly with distance from the steps, the gradient of dilatation around steps will significantly affect diffusion kinetics of impurities and the strain energy seems too low to significantly enhance chemical processes.

Sign in / Sign up

Export Citation Format

Share Document