Enhanced Ball Shear Testing Configuration For Substrate LGA Sensor Devices

Semiconductor assembly mass production environment has means of testing and verifying bond consistency and reliability during wire bonding. Common bond integrity assessment is ball shear testing (BST). This test enables analysis of the strength between the bond pad and a ball bond. This paper presents significant procedure on how ball shear testing parameters should be treated during wirebond integrity check. Device complexity in terms of performing ball shear testing specifically on sensor dice has different output responses. Frequent shearing on die resulted as bond pads are elevated by 30 µm (microns). To address manufacturing in-process controls challenges, shearing tool position, dage settings, and optical scopes are taken into consideration. Also, a study was performed on the execution correctness in combination with proper dage parameters was explored to meet good ball shear test process capability and break modes.

Elimination of Intermetallic Coverage Over-etching on Aluminum Pad

Intermetallic coverage (IMC) is one of the critical wirebond output responses that is usually checked to ensure the ball to pad integrity. The success of wirebonding relies on the formation of an interfacial intermetallic growth of ball bond to ensure it can withstand reliability stresses. The challenging approach in IMC analysis detect as over-etching around IMC area that leads to inaccurate IMC data collection. To address the over-etching, we generate a new method which is backside polishing that results to a reliable IMC data collection and help reduced the cycle time of IMC data gathering.

Effects of Bonding Parameters on Free Air Ball Properties and Bonded Strength of Ag-10Au-3.6Pd Alloy Bonding Wire

Free air ball (FAB) and bonded strength were performed on an Ag-10Au-3.6Pd alloy bonding wire (diameter of 0.025 mm) for different electronic flame-off (EFO) currents, times and bonding parameters. The effects of the EFO and bonding parameters on the characteristics of the FAB as well as the bonded strength were investigated using scanning electron microscopy. The results showed that, for a constant EFO time, the FAB of the Ag-10Au-3.6Pd alloy bonding wire transitioned from a pointed defined ball to an oval one, then to a perfectly shaped one, and finally to a golf ball with an increase in the EFO current. On the other hand, when the EFO current was constant and the EFO time was increased, the FAB changed from a small ball to a perfect one, then to a large one, and finally to a golf ball. The FAB exhibited the optimal geometry at an EFO current of 0.030 A and EFO time of 0.8 ms. Further, in the case of the Ag-10Au-3.6Pd alloy bonding wire, for an EFO current of 0.030 A, the FAB diameter exhibited a nonlinear relationship with the EFO time, which could be expressed by a quadratic function. Finally, the bonded strength decreased when the bonding power and force were excessively high, causing the ball bond to overflow. This led to the formation of neck cracks and decrease in the bonded strength. On the other hand, the bonded strength was insufficiently when the bonding power and force were small. The bonded strength was of the desired level when the bonding power and force were 70 mW and 0.60 N (for the ball bonded) and 95 mW and 0.85 N (for the wedge bonded), respectively.

Copper Ball Voids: Failure Mechanisms and Methods of Controlling at High Temperature Automotive Application

Since 2008, fine gauge (≤ 35 μm diameter) copper (Cu) wire has been rapidly replacing fine gauge gold (Au) wire in consumer, commercial, and industrial products [2–4]. The first wave of Cu wire products used bare, uncoated Cu wire which is soon to known having Cu-Al IMC corrosion induced by mobile chlorine ions in the epoxy mold compound system when IC parts are subjected to moisture related package stress tests such as biased HAST (Highly Accelerated Stress Test) [1–7]. Additionally, when comparing to Au wires, the 2nd bond process window of bare Cu wire can be very narrow and becomes a concern of moving into HVM (high volume manufacturing) [8]. Thus, palladium-coated Cu (PdCu) wire was introduced to the semiconductor assembly market aiming to provide more margin of passing biased HAST and enhance 2nd bond process capability [9–13]. However, the use of Pd-Cu wire is not a panacea to all Cu wire bond problems. One unique anomaly for Pd-Cu wire is the Cu ball void [1] which is observed only with Pd-Cu and not bare Cu ball bonds during HTSL (high temperature storage life) tests. The mechanism of forming Cu ball voids was proven to be the galvanized corrosion mechanism with Pd-Cu coupling. Significant factors affecting the formation rate of Cu ball voids are found to be baking temperature, EFO current settings, bonding parameters and mold compound additives (sulfur). Both anodic and cathodic chemical reactions will be proposed for Cu voids in this paper. Even though Cu void can be considered as a cosmetic defect for the majority of application since the peak temperature of device mission profile is always no larger than 175C. The application at extreme high temperature (for example, 190C) can actually cause electrical failure at the ball bon region due to the Cu void formation in terms of size and location at the Cu-Al IMC region. The main effect is due to the selected mold compound having high amount of metallic adhesion promoter which is sulfur-based and extensive high temperature storage test condition (190C). The FIB/SEM picture of failing ball bond due to Cu voids from this particular device will be presented in the paper. Thus, a newly developed doped Cu wire without Pd coating has been proposed by many wire suppliers to overcome Cu ball voids. However, doped Cu wires without Pd coating have suffered the same high volume manufacturing issues observed by bare Cu wires. For example, short tail and mean time between assist (MTBA) for doped Cu wires without Pd coating are both as poor as bare Cu wires. We will present high temperature storage test results obtained by doped PdCu wires in this paper. To balance high volume manufacturing issues and Cu void formation, doped PdCu wires are also proposed recently. Several doped PdCu wires whose extensive high temperature storage results (220C) will be presented in this paper. The worst case mold compound with high amount of sulfur based adhesion promoter has been used to test the effectiveness of these new wire types. At such harsh testing condition, there is one doped PdCu wire in our test can actually survive without electrical failed ball bond due to Cu voids. Factors of effectiveness of doped PdCu wires will be discussed in this paper. Authors have chosen to focus on Cu voids at both 1st bond (ball bond) and 2nd bond (wedge). 20 um wire diameter has been used for all test vehicle in this study. All controlling factors of eliminating Cu voids will surely be included at the end of this paper.

Non-Destructive Visualization of Bond Pad Defects using Acoustic Microscopy in the GHz-Band

GHz scanning acoustic microscopy (GHz-SAM) was successfully applied for non-destructive evaluation of the integrity of back end of line (BEOL) stacks located underneath wire-bond pads. The current study investigated two sample types of different IC processes. Realistic bonding defects were artificially induced into samples and the sensitivity of the acoustic GHz-microscope towards defects in BEOL systems was studied. Due to the low penetration depth in the acoustic GHz regime, a specific sample preparation was conducted in order to provide access to the region of interest. However, the preparation stopped several microns above the interfaces of interest, thus avoiding preparation artifacts in the critical region. Cratering related cracks in the bond pads have been imaged clearly by GHz-SAM. The morphology of the visualized defects corresponded well with the results obtained by a chemical cratering test. Moreover, delamination defects at the interface between ball and pad metallization were detected and successfully identified. The current paper demonstrates non-destructive inspection for bond-pad cratering and ball-bond delamination using highly focused acoustic waves in the GHz-band and thus illustrates the analysis of micron-sized defects in BEOL layer structures that are related to wire bonding or test needle imprints.