Luminescence Studies of Eu3+ Doped Calcium Bromofluoride Phosphor

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Jagjeet Kaur ◽  
Yogita Parganiha ◽  
Vikas Dubey

The present paper reports photoluminescence (PL) and thermoluminescence (TL) properties of rare earth-doped calcium bromo-fluoride phosphor. The europium (Eu3+) was used as rare earth dopant. The phosphor was prepared by Solid state reaction method (conventional method). The PL emission spectrum of the prepared phosphor shows intense peaks in the red region at 611 nm for 5D0→7F2 transitions, and the PL excitation spectra show a broad band located around 220–400 nm for the emission wavelength fixed at 470 nm. The TL studies were carried out after irradiating the phosphor by UV rays with different exposure time. The glow peak shows second-order kinetics. The present phosphor can act as host for red light emission in display devices.

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Vikas Dubey ◽  
Sadhana Agrawal ◽  
Jagjeet Kaur

The present paper reports the effect of europium concentration on photoluminescence (PL) and thermoluminescence (TL) studies of Eu3+ doped Y4Al2O9 phosphor using inorganic materials like yttrium oxide (Y2O3), aluminium oxide (Al2O3), boric acid (H3BO3) as a flux, and europium oxide (Eu2O3). The sample was prepared by the modified solid state reaction method, which is the most suitable for large-scale production. The prepared phosphor sample was characterized using X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEGSEM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), thermoluminescence (TL), and CIE techniques. The PL emission was observed in the range of 467, 535, 591, 611, 625, and 629 nm for the Y4Al2O9 phosphor doped with Eu3+ (0.1 mol% to 2.5 mol%). Excitation spectrum was found at 237 and 268 nm. Sharp peaks were found around 591, 611, and 625 nm with high intensity. From the XRD data, using Scherer’s formula, the calculated average crystallite size of Eu3+ doped Y4Al2O9 the phosphor is around 55 nm. Thermoluminescence study was carried out for the phosphor with UV irradiation. The present phosphor can act as single host for red light emission in display devices.


2007 ◽  
Vol 561-565 ◽  
pp. 1081-1084
Author(s):  
Shi Kao Shi ◽  
Jing Gao ◽  
Ji Zhou

The lithium ions doped red-emitting phosphors of (Ca,Eu)WO4 and (Ca,Eu)MoO4 were synthesized by solid-state reaction method, and their luminescent properties were investigated. The XRD patterns show that the phosphors are isostructural and share a tetragonal scheelite structure, even some lithium ions are doped. The excitation spectra consist of broad charge transfer bands in the short-wave UV region of W6+→O2- and Eu3+→O2- with three sharp lines around 395, 465 and 535 nm of the Eu3+ 4f excitation transitions. The characteristic emissions of WO4 2- and MoO4 2- are quenched absolutely and red light emission of Eu3+ exhibits predominate peak around 615 nm due to the electric dipole energy transition of 5D0→7F2. Excited with 395 nm, the evident enhanced emission of the phosphors were observed when Li+ doped in the host, which implies that the addition of some Li+ is beneficial for the energy transfer from WO4 2- or MoO4 2- to Eu3+.


2021 ◽  
Vol 11 (10) ◽  
pp. 1732-1738
Author(s):  
Soung Soo Yi ◽  
Jae Yong Jung

We have developed organic–inorganic hybrid polyhedral oligomeric silsequioxane (POSS) type monomer ligand 2,6-pyridinediamine-bis-propanylheptaisobutyl POSS (PDC-POSS) and synthesized rare earth (RE =Eu3+) doped hybrid complex PDC-POSS phosphors. The PDC-POSS precursor was prepared using (3-aminopropyl)heptaisobutyl POSS, 2,6-pyridinedicarboxylic acid chloride (PDC) as the host material, and then coordinated with RE3+ using europium nitrate regents to synthesize PDC-POSS:Eu3+ phosphors. The photoluminescence (PL) spectra of the PDC-POSS:Eu3+ hybrid phosphors were detected at 592, 616, 649, 693 nm under UV light (λ= 288 nm) excitation. In addition, the synthesized hybrid phosphors showed red light emission under UV light. The phosphors were demonstrated on a flexible sheet that could be applied for red emitting LEDs, and for anti-counterfeiting, which requires the film to remain hidden and identifiable only by UV light.


2010 ◽  
Vol 105-106 ◽  
pp. 827-829
Author(s):  
Da Wei He ◽  
Xin Rong Zhou ◽  
Yong Sheng Wang

A series of phosphor of (MxMg1-x)2SiO4: Dy3+, Eu3+ (M=Ca, Sr, Ba) were synthesized by high temperature solid-state reaction method and studied. The structure and emission spectrum excited by near violet light were investigated. The excitation spectra of single-doped (MxMg1-x)2SiO4: Dy3+ show strong absorption near 322nm, 347nm, 362nm and 391nm due to 6H15/2→4I9/2, 6H15/2→6P5/2, 6H15/2→4F7/2, 6H15/2→4G11/2 transition of Dy3+. The emission light is at about 469nm, 474nm, 483nm and 494nm under 391nm UV excitation. In order to obtain white light emission, (MxMg1-x)2SiO4: Dy3+, Eu3+ (M=Ca, Sr, Ba) were prepared to enhance the red light emission.


2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
J. Li ◽  
O. H. Y. Zalloum ◽  
T. Roschuk ◽  
C. L. Heng ◽  
J. Wojcik ◽  
...  

Rare earth (Tb or Ce)-doped silicon oxides were deposited by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD). Silicon nanocrystals (Si-ncs) were formed in the silicon-rich films during certain annealing processes. Photoluminescence (PL) properties of the films were found to be highly dependent on the deposition parameters and annealing conditions. We propose that the presence of a novel sensitizer in the Tb-doped oxygen-rich films is responsible for the indirect excitation of the Tb emission, while in the Tb-doped silicon-rich films the Tb emission is excited by the Si-ncs through an exciton-mediated energy transfer. In the Ce-doped oxygen-rich films, an abrupt increase of the Ce emission intensity was observed after annealing at 1200∘C. This effect is tentatively attributed to the formation of Ce silicate. In the Ce-doped silicon-rich films, the Ce emission was absent at annealing temperatures lower than 1100∘C due to the strong absorption of Si-ncs. Optimal film compositions and annealing conditions for maximizing the PL intensities of the rare earths in the films have been determined. The light emissions from these films were very bright and can be easily observed even under room lighting conditions.


2012 ◽  
Vol 531-532 ◽  
pp. 145-148 ◽  
Author(s):  
Rui Jin Yu ◽  
Jin Young Park ◽  
Hyun Kyoung Yang ◽  
Byung Kee Moon ◽  
Byung Chun Choi ◽  
...  

A new deep red-emitting Mn2+-activated SrLaGa3S6O phosphor was first prepared by a solid-state reaction method. Their luminescence properties were investigated by photoluminescence excitation and emission spectra. The emission spectrum shows a broad band with an emission maximum at 668 nm under the host excitation of 340 nm. The full width at half maximum (FWHM) of the emission peak is about 83 nm. The CIE chromaticity coordinates (x = 0.673 and y = 0.312) shows that the phosphor emission is in the deep red region and were very near to the NTSC standard values for red. Since the excitation band of the phosphor lies in the near UV excitable region, giving a deep red emission, it can be used for applications in near UV phosphor converted white LED lighting and display devices.


2018 ◽  
Vol 8 (9) ◽  
pp. 2643 ◽  
Author(s):  
Yangyi Zhang ◽  
Jingjing Liu ◽  
Yang Ji ◽  
Dongke Li ◽  
Jun Xu ◽  
...  

2006 ◽  
Vol 24 (6) ◽  
pp. 728-731 ◽  
Author(s):  
Hao Jianhua ◽  
He Guogen ◽  
Huang Xiongwu ◽  
Wu Rui

2004 ◽  
Vol 817 ◽  
Author(s):  
D. Pacifici ◽  
G. Franzò ◽  
F. Iacona ◽  
A. Irrera ◽  
S. Boninelli ◽  
...  

AbstractIn the present paper, we will review our work on rare-earth doped Si nanoclusters. The samples have been obtained by implanting the rare-earth (e.g. Er) in a film containing preformed Si nanocrystals. After the implant, samples have been treated at 900°C for 1h. This annealing temperature is not enough to re-crystallize all of the amorphized Si clusters. However, even if the Si nanoclusters are in the amorphous phase, they can still efficiently transfer the energy to nearby rare-earth ions. We developed a model for the Si nanoclusters-Er system, based on an energy level scheme taking into account the coupling between each Si nanocluster and the neighboring Er ions. By fitting the data, we were able to determine a value of 3×10−15 cm3 s−1 for the Si nanocluster-Er coupling coefficient. Moreover, a strong cooperative up-conversion mechanism between two excited Er ions and characterized by a coefficient of 7×10−17 cm3 s−1, is shown to be active in the system, demonstrating that more than one Er ion can be excited by the same nanocluster. We show that the overall light emission yield of the Er related luminescence can be enhanced by using higher concentrations of very small nanoaggregates. Eventually, electroluminescent devices based on rare-earth doped Si nanoclusters will be demonstrated.


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