scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

X-Ray Diffraction Method for Determining Textured Volume Fractions in PZT Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
G.R. Fox
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Role ◽  
New Method ◽  
Electrical Performance ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Volume Fractions

AbstractThe crystallographic texture of PZT thin films has been proven to play a critical role in the electrical performance of PZT used in non-volatile FRAM. During both development and production of FRAM, PZT texture must be monitored to assure ferroelectric performance. A common method for monitoring texture is to use normalized intensities collected from X-ray diffraction 2-theta scans. Although this method can reveal thin film texture, it does not give a quantitative measure of the volume of textured and/or random material. In addition, this method can only be used to compare films with constant thickness since differences in X-ray absorption are not taken into account. A new method for calculating the volume fractions of textured and randomly oriented material in PZT thin films has been developed. This new method for calculating textured volume fractions still utilizes integrated intensities from 2-theta scans, but the calculations include corrections for film thickness and geometrical factors. The calculated volume fractions obtained from this new method of data analysis can be used directly for physical evaluation of PZT thin film ferroelectric performance.

Effect of Annealing Temperature on Silver Doped Titanium Dioxide (Ag/TiO2) Thin Film via Sol-Gel Method

2018 ◽  
Vol 280 ◽  
pp. 26-30 ◽  
Author(s):  
Kamrosni Abdul Razak ◽  
Dewi Suriyani Che Halin ◽  
Mohd Mustafa Abdullah Al Bakri ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Norsuria Mahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Micrograph ◽  
Doped Titanium Dioxide

This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO2) nanocrystalline thin films.AgTiO2nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600°C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO2thin film annealed at 600°C have anatase TiO2phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.

BUFFER LAYER EFFECTS ON MAGNETOELECTRIC COUPLING OF Ni/Pb(Zr0.52Ti0.48)O3 BILAYERS

2011 ◽  
Vol 18 (05) ◽  
pp. 177-181
Author(s):  
K. BI ◽  
Z. L. HE ◽  
Y. G. WANG
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Interface Coupling ◽  
Voltage Coefficient ◽  
Pzt Thin Film ◽  
Electromagnetic Sensor

Magnetoelectric (ME) Ni/Pb(Zr0.52Ti0.48)O3 bilayers have been successfully prepared by hydrothermal method using Ti as buffer layer. The hydrothermal mechanism of PZT thin film deposited onto Ni layer has been discussed. The structure and ferroelectric properties of the deposited PZT thin films are characterized by X-ray diffraction and ferroelectric testing. The ME voltage coefficient of the Ni /PZT bilayers gradually decreases as the thickness of buffer layer increases because the interface coupling of the Ni /PZT layers gradually decreases. The large ME coefficient makes these Ni /PZT bilayers possible for applications in multifunctional devices such as electromagnetic sensor, transducers and microwave devices.

scholarly journals PENUMBUHAN DAN KARAKTERISASI LAPISAN TIPIS PbTiO3 YANG DISIAPKAN DENGAN TEKNIK SPIN COATING

Molekul ◽  
2008 ◽  
Vol 3 (1) ◽  
pp. 48
Author(s):  
Bilalodin Bilalodin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Bulk Powder ◽  
Pbtio3 Thin Film ◽  
Coating Method

The growth of PbTiO3 ferroelectric thin films have successfully done. Thin films were made from bulk (powder) PbTiO3 dissolved in methanol solution. The condensation was mixed during 1 hour to get homogeneous condensation. Thin films were grown above corning substrates by spin coating method. Optimation was done by various of annealing temperature. The physical properties of thin films were characterized by Energi Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), Scanning and Electron Microscopy (SEM). EDS measurement showed that the stoichiometry composition ratio of Pb/Ti is 1/1.26 at annealing temperature 600oC and 1/1.29 at annealing temperature 700oC. The result of XRD pattern showed that crystal structure of PbTiO3 thin films are tetragonal. The calculated lattice parameters ontained from Chohen Method are a=b= 3.873 Å dan c= 4.130Å. The result of SEM PbTiO3 thin film showed that thin film has globular grain size.

The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

2013 ◽  
Vol 284-287 ◽  
pp. 324-328
Author(s):  
Tao Hsing Chen ◽  
Tzu Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Corning Glass ◽  
Conductive Film ◽  
Corning Glass Substrate

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

Effects of annealing parameters on residual stress and piezoelectric performance of ZnO thin films studied by X-ray diffraction and atomic force microscopy

2019 ◽  
Vol 52 (5) ◽  
pp. 951-959
Author(s):  
Jie-Nan Shen ◽  
Yi-Bo Zeng ◽  
Ma-Hui Xu ◽  
Lin-Hui Zhu ◽  
Bao-Lin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Annealing Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Piezoelectric Performance

The residual stresses and piezoelectric performance of ZnO thin films under different annealing parameters have been studied by X-ray diffraction and atomic force microscopy (AFM). First, ZnO thin films with a thickness of 800 nm were grown on a Pt/Ti/SiO2/Si substrate by magnetron sputtering. Second, the orthogonal experimental method was selected to study the effects of annealing temperature, annealing time and oxygen content on the residual stresses of the ZnO thin films. The residual stresses of the ZnO thin films were measured by X-ray diffraction and the sin2ψ method. Finally, the three-dimensional topography and piezoelectric performance of the ZnO thin films were measured by AFM. The results showed that the oxygen content during the annealing process has the greatest effect on the residual stress, followed by the annealing temperature and annealing time. A minimum residual stress and optimal piezoelectric performance can be realized by annealing the ZnO thin film in pure oxygen at 723 K for 30 min.

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