Influence of plasmon resonance on the luminescence of titanium dioxide thin films doped with rare earth ions

In this work the study of the optical properties of europium doped titanium dioxide thin films (TiO2:Eu) enhanced by gold plasmonic nanostructures are presented. Plasmonic platforms were manufactured by thermal annealing of thin film of Au, deposited on a Corning glass substrate. As a result of thermal treatment, gold spherical nanostructures with average dimensions of 50 nm were obtained. Luminescent TiO2:Eu film was deposited by RF magnetron sputtering method, from mosaic target. Morphology of gold nanostructures was investigated by SEM and TEM microscopes, while composition of oxides film was analysed by XPS methods. Luminescence properties were studied on the basis of excitation and emission spectra. Experiments have shown that such structures exhibit interesting luminescent properties and could be potential candidates for optoelectronics applications.

Low Temperature Graphene Growth Effort on Corning Glass Substrate by Using VHF-IP HWC-PECVD

One promising method for growing carbon-based materials, especially for electronics and optoelectronics application, is PECVD (Plasma Enhanced Chemical Vapor Deposition). In addition to the large-area thin film obtained, this method also requires relatively lower growth temperature. By modifying the PECVD reactor through the application of Hot-Wire Cell (HWC) placed between two electrodes (called In Plasma, IP), and plasma generator frequency of 70 MHz which is categorized as Very High Frequency (VHF), graphene flakes have been successfully grown by using methane (CH4) gas as precursor at pressure 300 mTorr and substrate temperature of 275°C on corning glass substrate. This result indicates that this method is potentially to grow graphene at lower temperature by adjusting several growth parameters, especially temperature of hot wire cell that plays important role in the deposition process. It should be noted that important factor that greatly determined the successful of graphene flakes growth was the use of metal catalyst in the form of very thin film. In this research, silver was used as metal catalyst which was prepared by evaporation method and then annealed at 600°C for 30-60 minutes.

The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

ZnO Films Growth at Different Temperature on the Substrate of Corning Glass by MOCVD

We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46°, indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM).