The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

2013 ◽  
Vol 284-287 ◽  
pp. 324-328
Author(s):  
Tao Hsing Chen ◽  
Tzu Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Corning Glass ◽  
Conductive Film ◽  
Corning Glass Substrate

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

PREFERABLE ORIENTATION OF CRYSTALLINE THIN-FILM OF MODIFIED BNN SYSTEM

1989 ◽  
Vol 03 (06) ◽  
pp. 465-470 ◽  
Author(s):  
MASAYUKI TSUKIOKA ◽  
TASUKU MASHIO ◽  
MASAJI SHIMAZU ◽  
TAKESHI NAKAMURA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Steel Substrate ◽  
Rf Sputtering ◽  
Polished Surface ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantitative Analyses

Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long stainless steel substrate (5×100 mm ). The result indicated that preferable orientation was dominant near the position of plasma center. In order to distinguish whether the strong X-ray peak observed in the preferably aligned BNN thin-film is due to (200) peak of Nb 2 O 5 or (440) peak of BNN, X-ray measurements and the following quantitative analyses; fluorescent X-ray, ICP (Induced Coupled Radio Frequency Plasma) and an Atomic Absorption Method, were carried out for films sputtered from Nb-rich BNN target. The results reveal that the thin-films include considerable quantity of barium and sodium. This suggests that the highly aligned thin-film is composed of modified BNN and not Nb 2 O 5.

Structural, Electrical and Optical Properties of NiO Nanostructured Growth Using Thermal Wet Oxidation of Nickel Metal Thin Film

2017 ◽  
Vol 49 ◽  
pp. 56-65
Author(s):  
Dauda Abubakar ◽  
Naser Mahmoud Ahmed ◽  
Shahrom Mahmud
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Wave Length ◽  
Rf Sputtering ◽  
Optoelectronic Device ◽  
Wet Oxidation ◽  
Nickel Metal ◽  
X Ray ◽  
Ito Glass

The synthetic NiO nanostructures have been grown using thermal wet oxidation of metallic Ni thin films on ITO/glass by RF sputtering. The deposited Nickel thin films layer were oxidized in stream atmosphere at varying temperatures range of 400 °C to 700 °C inside furnace. Structural, surface morphology, electrical and the optical properties of NiO nanostructure were analysed by X-ray diffraction (XRD), Field effect scanning electron microscope (FESEM), energy dispersive X-ray (EDX), hall effects measurements and UV-Visible spectroscope measurements. XRD analysis proves that the NiO nanostructure has a cubic structure with orientation of the most intense peak at (200), and the film prepared 600 °C shows a better crystalline quality. FESEM and AFM results also prove that by increasing the oxidation temperature, the dimensions and roughness of the NiO nanoparticle thin layer increases. Also the oxidation rate appears higher. The optimum temperature for synthesizing high quality NiO with great stoichiometric and crystalline property was determined to be at 600 of wet oxidation. EDX results reveals only O and Ni present in the treated samples, indicating a pure NiO composition obtained. From UV-Vis absorption spectroscope of Tauc’s relationship, the bang gap was observed to increase with temperature at range of 3.29 – 4.09 eV. The effect of annealing was highlighted on the tunability of electrical property Ni thin films with both n-type and p-type behavior NiO as determine from hall measurement. The observed tunability of NiO thin film will ease way toward p-n homojunction realization for optoelectronic device applications of short wave length that involves photodetectors and LEDs

Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method

2012 ◽  
Vol 503-504 ◽  
pp. 620-624
Author(s):  
Yan Zou ◽  
Qiu Xiang Liu ◽  
Yan Ping Jiang ◽  
Xin Gui Tang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Bi3.4Nd0.6Ti3O12 (BNT) thin films have been prepared on Si (100) substrate by RF magnetron sputtering method. The crystalline structures were studied by X-ray diffraction. The surface of the films have been observed by SEM. The reflectivity was measured by n & k Analyzer 2000 with the wavelength from 190 to 900 nm. The optical constant, thickness and the forbidden band gap were fitted. The results showed that with the annealing temperatures raised from 600 to 750 °C, the reflectivity index decreased from 2.224 to 2.039, and the forbidden band gap decreased from 3.19 to 2.99 eV. The possible mechanism of the effect of annealing temperature on the optical properties was discussed.

Optical Properties of Cadmium Sulphide (CdS) Thin Films Spin-Coated on Glass Substrates

2021 ◽  
Vol 14 (1) ◽  
pp. 49-58
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Extinction Coefficient ◽  
Spin Coating ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Image ◽  
Cds Thin Films

Abstract: CdS thin films were synthesized on a glass substrate using spin coating method. The effects of annealing temperature on the optical properties of the prepared CdS films were investigated for different annealing temperatures of 200, 300 and 400 °C. Cadmium acetate, thiourea and ammonia were used as the source materials for the preparation of the thin films. The elemental composition, morphological, optical and structural properties of the films obtained by spin coating were investigated using Energy Dispersive X- ray Spectroscopy (EDAX), Scanning Electron Microscope (SEM), UV Spectrophotometry and X-ray diffraction (XRD) respectively. The SEM image of the unannealed film shows a spherical morphology and an irregular pattern without any void. It also shows that the film covers the substrate well. Annealing leads to an increase in transmittance with the highest transmission of 87% observed for the film annealed at 400oC. With increase in annealing temperature, optical parameters like extinction coefficient and dielectric constants show a reduction, while refractive index and skin depth exhibit an improvement. The absorption coefficient increases with increasing photon energy in the range 3.6 to 4.0 eV. The band gap values of the CdS thin film samples were found to be in the range between 3.14 eV and 3.63 eV. The bandgap is somewhat greater than the value of bulk CdS due to quantum size effect. EDX image confirmed the presence of Cadmium and Sulphur in the prepared CdS films. Annealing did not significantly change the extinction coefficient. The X-ray diffraction confirms the cubic structure of CdS deposited on glass substrate, where reflections from (111), (200), (220) and (311) planes are clearly shown with a preferential orientation along (111) plane. Debye-Scherer equation was used to determine the crystallite size of the most intense plane (111) and the value was found to be 8.4 nm. Keywords: SEM image, Spin coating, Surface morphology, Optical properties, Annealing.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Effect of Annealing Temperature on Silver Doped Titanium Dioxide (Ag/TiO2) Thin Film via Sol-Gel Method

2018 ◽  
Vol 280 ◽  
pp. 26-30 ◽  
Author(s):  
Kamrosni Abdul Razak ◽  
Dewi Suriyani Che Halin ◽  
Mohd Mustafa Abdullah Al Bakri ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Norsuria Mahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Micrograph ◽  
Doped Titanium Dioxide

This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO2) nanocrystalline thin films.AgTiO2nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600°C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO2thin film annealed at 600°C have anatase TiO2phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.

scholarly journals Structural And Optical Properties Of VOx Thin Films

2015 ◽  
Vol 60 (2) ◽  
pp. 957-961 ◽  
Author(s):  
K. Schneider
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Transmittance ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Corning Glass ◽  
Oxygen Gas ◽  
Deposited Films

Abstract VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated. Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by XRD that the deposited films are composed mainly of V2O5 phase. The estimated optical band gap of 2.5 eV corresponds to V2O5.

scholarly journals The structure and optical properties of organic semiconductor bulk hetrojunction blend (NiPcTs/Alq3) thin films

2019 ◽  
Vol 15 (33) ◽  
pp. 40-48
Author(s):  
Atyaf H. Kadhum
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Optical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Bulk Heterojunction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Visible ◽  
Xrd Patterns

The effect of heat treatment on the optical properties of the bulk heterojunction blend nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt and Tris (8-hydroxyquinolinato) Aluminum (NiPcTs/Alq3) thin films which prepared by spin coating was described in this study. The films coated on a glass substrate with speed of 1500 rpm for 1.5 min and treated with different annealing temperature (373, 423 and 473) K. The samples characterized using UV-Vis, X ray diffraction and Fourier transform Infrared (FTIR) spectra, XRD patterns indicated the presence of amorphous and polycrystalline blend (NiPcTs/Alq3). The results of UV visible shows that the band gap increase with increasing the annealing temperature up to 373 K and decreases with increase the annealing temperature to (423, 473)K respectively.

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