scholarly journals Synthesis of ReN3 Thin Films by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
G. Soto ◽  
H. Tiznado ◽  
W. de la Cruz ◽  
A. Reyes

In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  

2017 ◽  
Vol 72 (12) ◽  
pp. 967-975 ◽  
Author(s):  
Martin K. Schmitt ◽  
Hubert Huppertz

AbstractNi6B22O39·H2O was synthesized in a high-pressure/high-temperature reaction at 5 GPa/900°C. It crystallizes in the orthorhombic space group Pmn21 (no. 31) with the lattice parameters a=7.664(2), b=8.121(2) and c=17.402(2) Å. The crystal structure is discussed with regard to the isotypic compounds M6B22O39·H2O (M=Fe, Co) and the structurally related phase Cd6B22O39·H2O. Furthermore, the characterization of Ni6B22O39·H2O via X-ray powder diffraction and vibrational spectroscopy is reported.


2019 ◽  
Vol 74 (9) ◽  
pp. 685-692 ◽  
Author(s):  
Birgit Fuchs ◽  
Hubert Huppertz

AbstractThe title compound β-Eu(BO2)3 was synthesized in a high-pressure/high-temperature experiment at 4 GPa and 1473 K. The europium borate crystallizes in the orthorhombic space group Pnma (no. 62) with the lattice parameters a = 16.071(2), b = 7.440(4), and c = 12.362(5) Å. The structure is isotypic to the already known meta-borates β-RE(BO2)3 (RE = Y, Nd, Sm, Gd, Dy–Lu) and is built up of approximately triangular ribbons of BO4 tetrahedra. The compound was further characterized by X-ray powder diffraction, vibrational spectroscopy and shows a typical Eu3+ line emission upon excitation at 448 nm.


2015 ◽  
Vol 70 (4) ◽  
pp. 207-214 ◽  
Author(s):  
Daniela Vitzthum ◽  
Stefanie A. Hering ◽  
Lukas Perfler ◽  
Hubert Huppertz

AbstractOrthorhombic dysprosium orthogallate DyGaO3 and trigonal gallium orthoborate GaBO3 were synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 8.5 GPa/1350 °C and 8 GPa/700 °C, respectively. Both crystal structures could be determined by single-crystal X-ray diffraction data collected at room temperature. The orthorhombic dysprosium orthogallate crystallizes in the space group Pnma (Z = 4) with the parameters a = 552.6(2), b = 754.5(2), c = 527.7(2) pm, V = 0.22002(8) nm3, R1 = 0.0309, and wR2 = 0.0662 (all data) and the trigonal compound GaBO3 in the space group R3̅c (Z = 6) with the parameters a = 457.10(6), c = 1419.2(3) pm, V = 0.25681(7) nm3, R1 = 0.0147, and wR2 = 0.0356 (all data).


2016 ◽  
Vol 368 ◽  
pp. 115-118
Author(s):  
Radim Čtvrtlík ◽  
Jan Tomastik ◽  
Petr Schovánek

Amorphous silicon carbide (a-SiC) and boron carbide (a-B4C) thin films were deposited using reactive magnetron sputtering of SiC and B4C target, respectively. Nanoindentation tests performed up to 450 °C in air were performed to explore and compare their hardness and elastic modulus.Hardness of a-B4C film decreases at smaller rate in comparison to a-SiC film up to 450 °C. Similarly, elastic modulus value of B4C is more stable with temperature than that of a-SiC.


2017 ◽  
Vol 72 (1) ◽  
pp. 69-76 ◽  
Author(s):  
Daniela Vitzthum ◽  
Michael Schauperl ◽  
Klaus R. Liedl ◽  
Hubert Huppertz

AbstractOrthorhombic In3B5O12 was synthesized in a Walker-type multianvil apparatus under high-pressure/high-temperature conditions of 12.2 GPa and 1500°C. Its structure is isotypic to the rare earth analogs RE3B5O12 (RE=Sc, Er–Lu). In the field of indium borate chemistry, In3B5O12 is the third known ternary indium borate besides InBO3 and InB5O9. The crystal structure of In3B5O12 has been determined via single-crystal X-ray diffraction data collected at room temperature. It crystallizes in the orthorhombic space group Pmna with the lattice parameters a=12.570(2), b=4.5141(4), c=12.397(2) Å, and V=703.4(2) Å3. IR and Raman bands of In3B5O12 were theoretically determined and assigned to experimentally recorded spectra.


2010 ◽  
Vol 65 (10) ◽  
pp. 1206-1212 ◽  
Author(s):  
Almut Haberer ◽  
Reinhard Kaindl ◽  
Hubert Huppertz

The praseodymium orthoborate λ -PrBO3 was synthesized from Pr6O11, B2O3, and PrF3 under high-pressure / high-temperature conditions of 3 GPa and 800 °C in a Walker-type multianvil apparatus. The crystal structure was determined on the basis of single-crystal X-ray diffraction data, collected at room temperature. The title compound crystallizes in the orthorhombic aragonite-type structure, space group Pnma, with the lattice parameters a = 577.1(2), b = 506.7(2), c = 813.3(2) pm, and V = 0.2378(2) nm3, with R1 = 0.0400 and wR2 = 0.0495 (all data). Within the trigonal-planar BO3 groups, the average B-O distance is 137.2 pm. The praseodymium atoms are ninefold coordinated by oxygen atoms.


2011 ◽  
Vol 66 (2) ◽  
pp. 107-114 ◽  
Author(s):  
Stephanie C. Neumair ◽  
Johanna S. Knyrim ◽  
Oliver Oeckler ◽  
Reinhard Kaindl ◽  
Hubert Huppertz

The cubic iron hydroxy boracite Fe3B7O13OH・1.5H2O was synthesized from Fe2O3 and B2O3 under high-pressure/high-temperature conditions of 3 GPa and 960 °C in a modified Walker-type multianvil apparatus. The crystal structure was determined at room temperature by X-ray diffraction on single crystals. It crystallizes in the cubic space group F4̄3c (Z = 8) with the parameters a = 1222.4(2) pm, V = 1.826(4) nm3, R1 = 0.0362, and wR2 = 0.0726 (all data). The B-O network is similar to that of other cubic boracites.


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