Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz

2013 ◽  
Vol 5 (5) ◽  
pp. 567-578 ◽  
Author(s):  
Aritra Acharyya ◽  
Jit Chakraborty ◽  
Kausik Das ◽  
Subir Datta ◽  
Pritam De ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Power Output ◽  
Series Resistance ◽  
Simulation Method ◽  
Experimental Results ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Simulation Results

Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results show that the device is capable of delivering peak RF power of 657.64 mW with 8.25% conversion efficiency at 94 GHz for 50% voltage modulation; whereas RF power output and efficiency reduce to 89.61 mW and 2.22% respectively at 0.5 THz for same voltage modulation. Effect of parasitic series resistance on the L-S properties of DDR Si IMPATTs is also investigated, which shows that the decrease in RF power output and conversion efficiency of the device due to series resistance is more pronounced at higher frequencies especially at the THz regime. The NSVE L-S simulation results are compared with well established double-iterative field maximum (DEFM) small-signal (S-S) simulation results and finally both are compared with the experimental results. The comparative study shows that the proposed NSVE L-S simulation results are in closer agreement with experimental results as compared to those of DEFM S-S simulation.

scholarly journals IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

2015 ◽  
Vol 2015 ◽  
pp. 1-11
Author(s):  
Bhadrani Banerjee ◽  
Anvita Tripathi ◽  
Adrija Das ◽  
Kumari Alka Singh ◽  
Aritra Acharyya ◽  
...  
Keyword(s):  
Comparative Study ◽  
Millimeter Wave ◽  
Gaas Substrate ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Atmospheric Window ◽  
Atmospheric Windows ◽  
Nonsinusoidal Voltage ◽  
Impatt Diodes

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

scholarly journals Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 919
Author(s):  
Yang Dai ◽  
Qingsong Ye ◽  
Jiangtao Dang ◽  
Zhaoyang Lu ◽  
Weiwei Zhang ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Wide Bandgap ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Impatt Diode ◽  
Signal Characteristics ◽  
Design And Manufacture ◽  
First Time ◽  
Ddr Impatt

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

scholarly journals Особенности согласования нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 91 (4) ◽  
pp. 657
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Numerical Simulation ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Substrate Holder ◽  
Rf Power ◽  
Special Design ◽  
Reactive Component ◽  
Lower Electrode ◽  
Ion Etching ◽  
Simulation Results

This paper presents theoretical and experimental results on reactive ion etching of massive substrates in freon-14 with RF bias at the lower electrode. A hypothesis is proposed according to which a large-sized substrate violates the matching of the lower electrode with the RF generator by adding an additional reactive component to the impedance of the lower electrode. A numerical simulation of reactive ion etching with substrates of various sizes in a CF4 environment is performed . The simulation results showed a significant increase in the reactive component of RF power at the lower electrode if the substrate area exceeds 50% of the area of the lower electrode, which is consistent with the proposed hypothesis. It has been experimentally shown that the etching of massive substrates violates the matching of the lower electrode with the RF generator. A special design of the substrate holder for massive substrates has been developed. It is shown that such a substrate holder significantly improves the matching of the RF generator with the lower electrode, especially when adding 0.3-0.9 l/h argon to the plasma-forming mixture.

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

2013 ◽  
Vol 5 (1) ◽  
pp. 91-100 ◽  
Author(s):  
Aritra Acharyya ◽  
Suranjana Banerjee ◽  
J. P. Banerjee
Keyword(s):  
Electric Field ◽  
Millimeter Wave ◽  
Series Resistance ◽  
Simulation Technique ◽  
Drift Region ◽  
Large Signal ◽  
Depletion Width ◽  
Steady State Oscillation ◽  
Novel Method ◽  
Phase Angles

A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

CFD Study of 2D Model of Diffuser for Harnessing Tidal Energy

2012 ◽  
Vol 482-484 ◽  
pp. 2270-2274 ◽  
Author(s):  
Nasir Mehmood ◽  
Zhang Liang ◽  
Jawad Khan
Keyword(s):  
Fluid Flow ◽  
Power Output ◽  
Tidal Current ◽  
Experimental Results ◽  
Time Investment ◽  
Tidal Turbines ◽  
Simulation Results ◽  
Tidal Current Turbine ◽  
Current Turbine ◽  
2D Model

Diffuser augmented tidal turbines are getting enormous attention due to their immense potential to increase the generated power output. Researchers around the globe are investing considerable time and financial resources in this domain. Limited research results are available for diffuser augmented tidal turbines due to their emerging nature, large and costly research and development setup, startup cost and proprietary issues. Turbine enclosed in a diffuser is based on the principle that the generated power output by a tidal turbine is directly proportional to the cube of velocity of incoming fluid flow. Thus, even a minor increase in velocity considerably increases the generated power output. The diffuser helps accelerate the incoming fluid flow. Hence, the efficiency of the turbine is significantly increased by using a diffuser. It is challenging to accelerate the incoming flow by using a diffuser due to its shape, geometry and fabrication limitations. The diffuser design requires great deal of innovation and time investment. The purpose of this paper is to present the study of 2D model of diffuser for tidal current turbine. The study involves developing a 2D CFD model of diffuser, acquiring simulation results and comparison with experimental results. The mesh is generated in ICEM followed by simulation in CFX. The simulation results are compared to experimental results and found in reasonable agreement. The research is essential to utilize CFD tools for diffuser design used for tidal current turbine.

scholarly journals Design and Characterization of a Microwave Planar Sensor for Dielectric Assessment of Vegetable Oils

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1030 ◽  
Author(s):  
Aleksandr Ivanov ◽  
Timur Agliullin ◽  
Dario Laneve ◽  
Vincenza Portosi ◽  
Artem Vorobev ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Electric Field ◽  
Numerical Simulations ◽  
Vegetable Oils ◽  
Experimental Validation ◽  
Experimental Results ◽  
Geometrical Parameters ◽  
Frequency Range ◽  
Simulation Results

We report on the numerical simulations and experimental validation of a microwave planar sensor based on two coupled rings operating in the 4–6 GHz range. The fabricated sensor is used to characterize the dielectric permittivity of vegetable oils. We optimized the geometrical parameters in order to improve the overlap between the oil samples under study and the electric field. The experimental results showed an excellent match with the simulation results. The fabricated sensor allowed to retrieve the oil permittivity with a sensitivity of about 35 MHz per permittivity unit in the frequency range of interest. This paves the way to the realization of compact and sensitive sensors for a wide plethora of fields ranging from industry and food to chemistry and biology.

Large-Signal Characterization of PMN-PT-Ba (90/10/3)

1997 ◽  
Author(s):  
Robert S. Janus ◽  
Mark B. Moffett ◽  
James M. Powers
Keyword(s):  
Large Signal ◽  
Signal Characterization
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