A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

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IMPATT Diodes Based on 111, 100, and 110 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

International Scholarly Research Notices ◽

10.1155/2015/484768 ◽

2015 ◽

Vol 2015 ◽

pp. 1-11

Author(s):

Bhadrani Banerjee ◽

Anvita Tripathi ◽

Adrija Das ◽

Kumari Alka Singh ◽

Aritra Acharyya ◽

...

Keyword(s):

Comparative Study ◽

Millimeter Wave ◽

Gaas Substrate ◽

Drift Region ◽

Rf Power ◽

Large Signal ◽

Atmospheric Window ◽

Atmospheric Windows ◽

Nonsinusoidal Voltage ◽

Impatt Diodes

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078713000597 ◽

2013 ◽

Vol 5 (5) ◽

pp. 567-578 ◽

Cited By ~ 21

Author(s):

Aritra Acharyya ◽

Jit Chakraborty ◽

Kausik Das ◽

Subir Datta ◽

Pritam De ◽

...

Keyword(s):

Conversion Efficiency ◽

Power Output ◽

Series Resistance ◽

Simulation Method ◽

Experimental Results ◽

Drift Region ◽

Rf Power ◽

Large Signal ◽

Simulation Results

Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results show that the device is capable of delivering peak RF power of 657.64 mW with 8.25% conversion efficiency at 94 GHz for 50% voltage modulation; whereas RF power output and efficiency reduce to 89.61 mW and 2.22% respectively at 0.5 THz for same voltage modulation. Effect of parasitic series resistance on the L-S properties of DDR Si IMPATTs is also investigated, which shows that the decrease in RF power output and conversion efficiency of the device due to series resistance is more pronounced at higher frequencies especially at the THz regime. The NSVE L-S simulation results are compared with well established double-iterative field maximum (DEFM) small-signal (S-S) simulation results and finally both are compared with the experimental results. The comparative study shows that the proposed NSVE L-S simulation results are in closer agreement with experimental results as compared to those of DEFM S-S simulation.

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Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1014.68 ◽

2020 ◽

Vol 1014 ◽

pp. 68-74

Author(s):

Jun Ding Zheng ◽

Wen Sheng Wei ◽

Wei Bo Yang ◽

Chang Li

Keyword(s):

Electric Field ◽

Drift Region ◽

Large Signal ◽

Tunnel Current ◽

Large Power ◽

Static State ◽

Frequency Relation ◽

The Impact ◽

Lower Noise ◽

Impatt Diodes

Successes of GaN and SiC electronics in high frequency, large power realm indicate that, the GaN/SiC hetero-structures can be used to design the impact avalanche transit time (IMPATT) diodes operating at Terahertz range, of which holds advantages over homo-structural counterparts in lower noise and reduced tunnel current. Here, the (n)GaN/(p)SiC and (p)GaN/(n)SiC double drift region (DDR) IMPATT diodes operating at 0.85 THz are proposed based on the quantum corrected drift-diffusion (QCDD) model, the performance parameters of static state, large signal and noise properties of the studied devices such as peak electric field intensity, breakdown voltage, optimal negative conductance, output power, conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were numerically calculated and analyzed, which can guide to optimize the GaN/SiC IMPATT diodes.

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Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.954.182 ◽

2019 ◽

Vol 954 ◽

pp. 182-187 ◽

Cited By ~ 1

Author(s):

Jun Ding Zheng ◽

Wen Sheng Wei ◽

Jian Zhu Ye ◽

Wei Bo Yang ◽

Chang Li ◽

...

Keyword(s):

Electric Field ◽

Integrated Circuit ◽

Drift Region ◽

Large Signal ◽

Static State ◽

Atmospheric Window ◽

Frequency Relation ◽

Negative Conductance ◽

Thz Power ◽

Impatt Diodes

Si/SiC heterostructural impact avalanche transit time (IMPATT) diode indicates of important applications in Terahertz (THz) power source, integrated circuit etc. In this paper, the (n)Si/(p)4H-SiC, (n)Si/(p)6H-SiC, (n)Si/(p)3C-SiC heterostructural double drift region IMPATT diodes operating at the atmospheric window frequency of 0.85 THz are designed by the drift-diffusion model while their static state, large signal and noise properties are numerically simulated. The performance parameters of the studied devices such as breakdown voltage, peak electric field strength, optimal negative conductance, output power, power conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were calculated and compared. This method can guide for optimizing the Si/SiC heterostructural IMPATT device in the future.

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Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) ◽

10.1109/inmmic.2017.7927301 ◽

2017 ◽

Cited By ~ 6

Author(s):

Tom K. Johansen ◽

Virginio Midili ◽

Michele Squartecchia ◽

Vitaliy Zhurbenko ◽

Virginie Nodjiadjim ◽

...

Keyword(s):

Millimeter Wave ◽

Signal Modeling ◽

Large Signal

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Application of Temperature-Dependent Fluorescent Dyes to the Measurement of Millimeter Wave Absorption in Water Applied to Biomedical Experiments

International Journal of Biomedical Imaging ◽

10.1155/2014/243564 ◽

2014 ◽

Vol 2014 ◽

pp. 1-5 ◽

Cited By ~ 13

Author(s):

Nataliia Kuzkova ◽

Oleksandr Popenko ◽

Andrey Yakunov

Keyword(s):

Millimeter Wave ◽

Millimeter Waves ◽

Temperature Effects ◽

Fluorescent Dyes ◽

Organic Dyes ◽

Temperature Dependent ◽

Wave Absorption ◽

Biological Objects ◽

Novel Method ◽

Local Temperature Increase

Temperature sensitivity of the fluorescence intensity of the organic dyes solutions was used for noncontact measurement of the electromagnetic millimeter wave absorption in water. By using two different dyes with opposite temperature effects, local temperature increase in the capillary that is placed inside a rectangular waveguide in which millimeter waves propagate was defined. The application of this noncontact temperature sensing is a simple and novel method to detect temperature change in small biological objects.

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Effect of Three-Dimensional Electric Field and Heat Conduction to Electrodes on the Temperature Rise During Irreversible Electroporation

ASME/JSME 2011 8th Thermal Engineering Joint Conference ◽

10.1115/ajtec2011-44214 ◽

2011 ◽

Cited By ~ 2

Author(s):

Seiji Nomura ◽

Kosaku Kurata ◽

Hiroshi Takamatsu

Keyword(s):

Heat Conduction ◽

Electric Field ◽

Temperature Rise ◽

Heat Conduction Equation ◽

Thermal Damage ◽

Irreversible Electroporation ◽

Three Dimensional ◽

End Effects ◽

Abnormal Cells ◽

Novel Method

The irreversible electroporation (IRE) is a novel method to ablate abnormal cells by applying a high voltage between two electrodes that are stuck into abnormal tissues. One of the advantages of the IRE is that the extracellular matrix (ECM) may be kept intact, which is favorable for healing. For a successful IRE, it is therefore important to avoid thermal damage of ECM resulted from the Joule heating within the tissue. A three-dimensional (3-D) analysis was conducted in this study to predict temperature rise during the IRE. The equation of electric field and the heat conduction equation were solved numerically by a finite element method. It was clarified that the highest temperature rise occurred at the base of electrodes adjacent to the insulated surface. The result was significantly different from a two-dimensional (2-D) analysis due to end effects, suggesting that the 3-D analysis is required to determine the optimal condition.

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Novel Negative Capacitance and Conductance in All Temperatures and Voltages of Au/CNTs/n-Si/Al at Low and High Frequencies

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac3b8f ◽

2021 ◽

Author(s):

A. Ashery ◽

Samia Gad ◽

A. E.H. Gaballah ◽

G. M. Turky

Keyword(s):

Carbon Nanotube ◽

High Frequency ◽

Series Resistance ◽

Negative Capacitance ◽

Donor Concentration ◽

Low Frequencies ◽

High Frequencies ◽

Depletion Width ◽

Density Surface ◽

P Type

Abstract The structure of carbon nanotube CNTs functioning as p-type material deposited over n-type silicon to produce heterojunction of Au/CNTs/n-Si/Al is presented in this study.This work explored the capacitance and conductance at various frequencies, temperatures, and voltages, the novelty here is that negative capacitance and conductance were observed at high frequencies in all temperatures and voltages, whereas capacitance appeared at both high and low frequencies, such as (2x107,1x107,1x102,10) Hz. At high-frequency f = 2x107 Hz, the capacitance raises while the conductance decreases; at all temperatures and voltages, the capacitance and conductance exhibit the same behavior at particular frequencies such as 1x106,1x105,1x104,1x103Hz, however their behavior differs at 2x107,1x107, 1x102 and 10Hz. Investigating the reverse square capacitance with voltage yielded the energy fermi (Ef), density surface of states (Nss), depletion width (Wd), barrier height, series resistance, and donor concentration (Nd)

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