Nanosecond rf-Power Switch for Gyrotron-Driven Millimeter-Wave Accelerators

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 111, 100, and 110 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 111 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 110 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

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A Millimeter-Wave Low-Loss and High-Power Switch MMIC using Multiple FET Resonators

2006 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2006.249682 ◽

2006 ◽

Cited By ~ 3

Author(s):

Masatake Hangai ◽

Tamotsu Nishino ◽

Kenichi Miyaguchi ◽

Morishige Hieda ◽

Kunihiro Endo ◽

...

Keyword(s):

Millimeter Wave ◽

High Power ◽

Low Loss ◽

Power Switch

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GaN devices for sub-millimeter-wave MMIC and high-speed low-loss power switch applications

71st Device Research Conference ◽

10.1109/drc.2013.6633869 ◽

2013 ◽

Author(s):

K. Shinohara

Keyword(s):

Millimeter Wave ◽

High Speed ◽

Low Loss ◽

Power Switch

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SPDT discrete switch design using switchable SIW resonators for millimeter wave MIMO transceiver

Indonesian Journal of Electrical Engineering and Computer Science ◽

10.11591/ijeecs.v24.i3.pp1542-1549 ◽

2021 ◽

Vol 24 (3) ◽

pp. 1542

Author(s):

Amirul Aizat Zolkefli ◽

Badrul Hisham Ahmad ◽

Noor Azwan Shairi ◽

Adib Othman ◽

Zahriladha Zakaria ◽

...

Keyword(s):

Radio Frequency ◽

Millimeter Wave ◽

Multiple Input Multiple Output ◽

Substrate Integrated Waveguide ◽

Rf Power ◽

High Isolation ◽

Multiple Input ◽

Input Multiple Output ◽

Switch Design ◽

Power Leakage

A single pole double throw (SPDT) discrete switch design using switchable substrate integrated waveguide (SIW) resonators is proposed in this paper. It was designed for the millimeter wave multiple input multiple output (MIMO) transceiver. An example application is for 5G communication in 26 GHz band. High isolation between transmitter and receiver (in the transceiver) is needed in SPDT switch design to minimize any high radio frequency (RF) power leakage in the receiver. Therefore, the use of switchable SIW resonators can achieve higher isolation if compared to the conventional series SPDT switch, where the isolation of the proposed SPDT is depend on the bandstop response of the SIW resonators. The switchable SIW resonators can be switched between allpass and bandstop responses to allow the operation between transmit and receive modes. As a result, the simulation and measurement showed that the proposed SPDT switch produced an isolation higher than 25 dB from 24.25 to 27.5 GHz compared to the conventional design.

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Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration

IEEE Microwave Magazine ◽

10.1109/mmm.2016.2635859 ◽

2017 ◽

Vol 18 (2) ◽

pp. 74-82 ◽

Cited By ~ 8

Author(s):

Nils Weimann ◽

Maruf Hossain ◽

Viktor Krozer ◽

Wolfgang Heinrich ◽

Marco Lisker ◽

...

Keyword(s):

Millimeter Wave ◽

Rf Power ◽

Wafer Level ◽

Material Combination ◽

The Future ◽

Sige Bicmos ◽

Tight Focus

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IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si

Post-Transition Metals ◽

10.5772/intechopen.95874 ◽

2021 ◽

Author(s):

Janmejaya Pradhan ◽

Satya Ranjan Pattanaik

Keyword(s):

Power Density ◽

Output Power ◽

Millimeter Wave ◽

Conversion Efficiency ◽

Small Signal ◽

Rf Power ◽

Signal Characteristics ◽

Maximum Conversion ◽

Signal Simulation ◽

Maximum Conversion Efficiency

The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation technique developed by the authors. The efficiency, output power and power density of GaAs IMPATT is higher than that of Si IMPATT. Results show that the DDR IMPATTs based on GaAs are most suitable for generation of RF power with maximum conversion efficiency up to 220 GHz. The noise behavior of GaAs IMPATT yield less noise as compared to Si IMPATT.

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Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173169 ◽

1990 ◽

Vol 48 (4) ◽

pp. 6-7

Author(s):

S.K. Streiffer ◽

C.B. Eom ◽

J.C. Bravman ◽

T.H. Geballet

Keyword(s):

Thin Films ◽

Room Temperature ◽

Deposition Process ◽

Nucleation And Growth ◽

Multilayer Structures ◽

Rf Power ◽

Oxygen Loss ◽

Transmission Electron ◽

Single Target ◽

Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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Analysis of Sputtered Zinc Oxide Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001781 ◽

1980 ◽

Vol 38 ◽

pp. 416-417

Author(s):

T. A. Emma ◽

M. P. Singh

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Piezoelectric Materials ◽

Oxide Films ◽

Optical Quality ◽

Zno Films ◽

Rf Power ◽

X Ray Diffraction ◽

Sputtered Films ◽

Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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