scholarly journals Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
C. Chuang ◽  
M. Mineharu ◽  
N. Matsumoto ◽  
M. Matsunaga ◽  
C.-W. Liu ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Average Rate ◽  
Relaxation Times ◽  
Energy Relaxation ◽  
Heat Diffusion ◽  
Multilayer Graphene ◽  
Hot Carriers ◽  
Conductance Fluctuations ◽  
Carrier Temperature ◽  
Grown Graphene

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature Te at various driving currents I while keeping the lattice temperature TL fixed. Interestingly, it is found that Te is proportional to I, indicating little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier Pe is proportional to (Te 2-TL 2), suggesting the heat diffusion rather than acoustic phonon processes in our system. The long energy relaxation times due to the weak electron-phonon coupling in CVD graphene capped with h-BN layer as well as in exfoliated multilayer graphene can find applications in hot carrier graphene-based devices.

Mobility of Hot Carriers in Germanium at 300°K

1968 ◽  
Vol 23 (12) ◽  
pp. 2035-2039
Author(s):  
M. Sánchez
Keyword(s):  
Electric Field ◽  
Field Intensity ◽  
Electric Field Intensity ◽  
Average Rate ◽  
Impurity Scattering ◽  
Rate Of Change ◽  
Hot Carriers ◽  
Ionized Impurity Scattering ◽  
Carrier Temperature ◽  
Carrier Energy

The mobility of hot electrons and holes in germanium at a lattice temperature of 300°K is calculated as dependent on carrier temperature and electric field intensity including not only the acoustical and nonpolar optical mode scattering but also the ionized impurity scattering. The Conwell theory of lattice mobility of hot carriers and the Conwell-Weisskopf theory of ionized impurity scattering are applied by taking into account the factor exp (θ/2 Te) in the average rate of change of carrier energy due to nonpolar optical interactions. The mobility is evaluated on an electronic digital computer as a function of the carrier temperature and electric field intensity for impurity concentrations 0, 4 x 1016, 2 x 1017, 1018 and 2.5 x 1019 cm-3, and also as a function of impurity concentration for low electric field intensities. The comparison of the theoretical results with the experimental data available shows a relatively good agreement.

Ultrafast Electron−Optical Phonon Scattering and Quasiparticle Lifetime in CVD-Grown Graphene

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3278-3283 ◽  
Author(s):  
Jingzhi Shang ◽  
Ting Yu ◽  
Jianyi Lin ◽  
Gagik G. Gurzadyan
Keyword(s):  
Optical Phonon ◽  
Phonon Scattering ◽  
Optical Phonon Scattering ◽  
Quasiparticle Lifetime ◽  
Grown Graphene

Direct Measurements of Energy Relaxation Times in Two-Dimensional Structures under Quasi-Equilibrium Conditions

2002 ◽  
Vol 384-385 ◽  
pp. 107-116 ◽  
Author(s):  
A. Verevkin ◽  
E.M. Gershenzon ◽  
G.N. Gol'tsman ◽  
N.G. Ptitsina ◽  
G.M. Chulkova ◽  
...  
Keyword(s):  
Relaxation Times ◽  
Energy Relaxation ◽  
Quasi Equilibrium ◽  
Two Dimensional ◽  
Equilibrium Conditions ◽  
Direct Measurements

Multilayer Graphene-Based Carbon Interconnect

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu
Keyword(s):  
Performance Metrics ◽  
Monolayer Graphene ◽  
Multilayer Graphene ◽  
Large Area ◽  
Electrical Stress ◽  
Oxygen Plasma Etching ◽  
Doping Technique ◽  
System Breakdown ◽  
Grown Graphene ◽  
On Chip

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Spectrum ◽  
Phonon Scattering ◽  
Relaxation Times ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Optical Phonon Scattering ◽  
Electron Phonon Scattering

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Diffusion and energy relaxation of hot carriers in graphene

2011 ◽  
Author(s):  
Brian Ruzicka ◽  
Lalani K. Werake ◽  
Nardeep Kumar ◽  
Shuai Wang ◽  
Kian Ping Loh ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Hot Carriers
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