Investigation on V2O5 Thin Films for Field Effect Transistor Applications

V2O5 thin films are analyzed for the substitution of SiO2 to reduce the leakage current in devices when SiO2 becomes ultrathin in submicron technology. Vanadium pentoxide (V2O5) has a high-k dielectric constant of 25 and can be replaced as a gate oxide in the field-effect transistor. V2O5 is deposited using pulsed laser deposition (PLD) in the oxygen (O2) environment at room temperature and characterized. The films surface morphology has been examined by scanning electron microscopy. The capacitance, dielectric constant, and dielectric loss are analyzed for fabricated metal oxide semiconductor (MOS) structure using Solartron SI-1260 impedance analyzer. The transfer characteristic of the fabricated device is analyzed using National Instruments NI-PXI 4110. The ION/IOFF ratio of 106 and threshold voltage (VTH) of 0.6 V is obtained.

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Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Cited By ~ 1

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

Aided Design

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Cited By ~ 1

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

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Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3006019 ◽

2008 ◽

Vol 26 (6) ◽

pp. 1887-1891 ◽

Cited By ~ 7

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.1773370 ◽

2004 ◽

Vol 85 (7) ◽

pp. 1286-1288 ◽

Cited By ~ 21

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Rino Choi ◽

Chang Hwan Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor

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Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

Thin Solid Films ◽

10.1016/j.tsf.2007.12.140 ◽

2008 ◽

Vol 516 (12) ◽

pp. 4222-4225 ◽

Cited By ~ 2

Author(s):

J.C. Liao ◽

Y.K. Fang ◽

Y.T. Hou ◽

W.H. Wu ◽

C.L. Hung ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Metal Gate ◽

Pulse Technique ◽

Bias Temperature Instability ◽

High K ◽

Effect Transistor

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Spin Speed and Duration Dependence of TiO2Thin Films pH Sensing Behavior

Journal of Sensors ◽

10.1155/2016/9746156 ◽

2016 ◽

Vol 2016 ◽

pp. 1-8 ◽

Cited By ~ 2

Author(s):

Muhammad AlHadi Zulkefle ◽

Rohanieza Abdul Rahman ◽

Khairul Aimi Yusof ◽

Wan Fazlida Hanim Abdullah ◽

Mohamad Rusop ◽

...

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensor ◽

Oxide Semiconductor ◽

Ph Sensing ◽

Spin Speed ◽

Coating Method ◽

Effect Transistor ◽

Sensing Membrane

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

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