scholarly journals Thin Resistive Thick-Film Layers Based on Precious Metal Resinate/Glass Systems

1978 ◽  
Vol 5 (1) ◽  
pp. 41-43 ◽  
Author(s):  
P. Prinsen
Keyword(s):  
Particle Size ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Precious Metal ◽  
Glass System ◽  
Volume Percent ◽  
Temperature Coefficient Of Resistance ◽  
Phase Temperature ◽  
Low Volume ◽  
Resistive Thick Film

This paper describes the preparation and results obtained with a ruthenium-resinate/glass resistive system prepared by firing on to a 96% alumina substrate. The results have been compared with a gold/rhodium-resinate/glass system. It is found in the ruthenium system that the particle size is about 200 Å and because of this, conduction occurs at a very low volume percent conduction phase. Temperature Coefficient of Resistance behaviour of the ruthenium based system is still anomalous.

Evaluation of Glass Frits for Development of Lead-Free Thick Film Resistor

2010 ◽  
Vol 2010 (1) ◽  
pp. 000752-000759
Author(s):  
Xudong Chen ◽  
W. Kinzy Jones
Keyword(s):  
Electrical Properties ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Glass Frit ◽  
Lead Free ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Glass Compositions ◽  
Free Glass

Glass frit is a major component of thick film resistor (TFR) for the production of hybrid circuits. More than thirty commercial lead-free glass frits with different compositions have been evaluated for developing a lead-free thick film resistor that is compatible with typical industry thick film processing and has comparable electrical properties as the lead bearing counterpart. Two glass compositions were selected out of 33 candidates for preparation of RuO2 based TFR inks, which were screen printed on alumina substrates and fired at 850°C. The preliminary results of these resistors showed that the sheet resistance spanned from 400 ohms per square (Ω/□) to 0.4 mega-ohms per square (MΩ/□) with 5–15% RuO2 and the hot temperature coefficient of resistance (HTCR) fell in a range of ±350ppm/°C.

scholarly journals Electrical properties of graphite-glass thick-film resistors

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Tomasz Matusiak ◽  
Arkadiusz Dabrowski ◽  
Leszek Golonka
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Sheet Resistance ◽  
Low Cost ◽  
Glass Mass ◽  
Temperature Coefficient Of Resistance ◽  
Content Type ◽  
Wide Range ◽  
Typical Temperature

Purpose The purpose of this paper is to present the properties of thick-film resistors made of novel pastes prepared from glass and graphite. Design/methodology/approach Graphite-based resistors were made of thick-film pastes with different graphite-to-glass mass fraction were prepared and examined. Sheet resistance, temperature coefficient of resistance, impact of humidity and short-term overload were investigated. The properties of the layers fired in atmospheres of air at 550°C and nitrogen at 875°C were compared. Findings Graphite-based resistors with various graphite-to-glass ratios made possible to obtain a wide range of sheet resistance from single O/square to few kO/square. These values were dependent on firing atmosphere, paste composition and the number of screen-printed layers. The samples made of paste with 1:1 graphite-to-glass ratio exhibited the temperature coefficient of resistance of about −1,000 ppm/°C, almost independently on the firing atmosphere and presence of a top coating. The resistors fired in the air after coating with overglaze, exhibited significantly lower sheet resistance, reduced impact of humidity and improved power capabilities. Originality/value In this paper, graphite-based resistors for applications in typical high-temperature cermet thick-film circuits were presented, whereas typical graphite-based resistors were fabricated in polymer thick-film technology. Owing to very low cost of the graphite, the material is suitable for low-power passive circuits, where components are not subjected into high temperature, above the typical temperature of operation of standard electronic components.

scholarly journals Thick Film Temperature Sensors Using Standard Pastes

1986 ◽  
Vol 12 (2) ◽  
pp. 91-101 ◽  
Author(s):  
I. Janoska ◽  
M. R. Haskard
Keyword(s):  
Aspect Ratio ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Film Industry ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Dielectric Layers ◽  
Thick Film Resistor

Standard thick film resistor pastes exhibit changes in their electrical characteristics when printed on top of dielectric layers. Of particular interest is the inherent change in their temperature coefficient of resistance. Simple temperature sensors were formed by deliberately printing thick film resistor pastes on top of larger area dielectric layers. Temperature tests carried out on these devices have shown that by selecting the correct paste combination and resistor aspect ratio stable, repeatable, temperature sensors with good linearity can be manufactured. A comparison is made of these sensors to other commercially available products currently used in the thick film industry.

scholarly journals Measurement of the Tunneling and Hopping Parameters in RuO2Thick Films

1984 ◽  
Vol 11 (2) ◽  
pp. 123-136 ◽  
Author(s):  
N. C. Halder ◽  
R. J. Snyder
Keyword(s):  
Particle Size ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Ruthenium Oxide ◽  
Low Concentration ◽  
Weight Percentage ◽  
Temperature Coefficient Of Resistivity

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina[(Al2O3)·96(MgO)·04]substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameterαand hopping parameterβwere determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameterαcould be determined. The parameterαincreased but the parameterβdecreased with temperature for the present films.

Processing, X-Ray, and TEM Studies of QS87 Series 56 KΩ/Square Thick Film Resistors

1996 ◽  
Vol 457 ◽  
Author(s):  
Gary M. Crosbie ◽  
Frank Johnson ◽  
William T. Donlon
Keyword(s):  
Temperature Coefficient ◽  
Thick Film ◽  
Firing Temperature ◽  
Lattice Parameter ◽  
Firing Time ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Wide Range ◽  
Temperature Lattice

ABSTRACTThick film resistors are glass/metal oxide nanocomposites used in hybrid microcircuits. These components have a small temperature coefficient of resistance that is useful in systems that experience a wide range of service temperatures. Test samples were produced by printing, drying, and firing resistor pastes in a laboratory process that simulated production conditions. The process parameters of peak firing temperature, time at peak temperature, and probe current were factors in a 23 factorial experiment that measured in-situ resistance (resistance during processing), as-fired resistance, and the temperature coefficients of resistance. As-fired resistance is shown to increase with firing time and temperature. In-situ resistance exhibited a small decrease with increasing firing temperature due to thermally-activated glass conduction at firing temperatures. The temperature coefficient of resistance measurements show that R[T] curve flattens with increasing firing time and temperature. X-ray diffraction revealed Pb-ruthenate, alumina, and Zr-silicate phases to be dispersed in the glass. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy revealed that the conductive phases, Pb- and CuBi-ruthenate particles, increased in size with increasing firing time and temperature. Lattice parameter measurements revealed only a small increase in the ruthenate structure. Resistance changes are attributed to increased separation of the conductive ruthenate particles by coarsening.

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

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