scholarly journals Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

2021 ◽  
Vol 10 (3) ◽  
pp. 1291-1299
Author(s):  
Fatin Nor Ahmad ◽  
Yusmar Palapa Wijaya ◽  
Khairul Anuar Mohamad ◽  
Nafarizal Nayan ◽  
Megat Muhammad Ikhsan Megat Hasnan ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Lattice Spacing ◽  
Deposition Time ◽  
Thermal Evaporation ◽  
Structural Characteristics ◽  
Bulk Phase ◽  
Phase Layer ◽  
Thermal Evaporation Method ◽  
Coated Glass

The physical and structural characteristics of pentacene thin films on indium tin oxide (ITO)-coated glass were studied. The pentacene films were deposited using the thermal evaporation method with deposition times of 20, 30, and 60 minutes. Field-emission scanning electron microscopy (FESEM) images revealed that film thickness increased with deposition time, with a bulk phase layer appearing at 60 minutes. The presence of the thin-film phase corresponding to 15.5 Å lattice spacing was demonstrated by X-ray diffraction (XRD) patterns in pentacene films with deposition times of 20 and 30 minutes. Meanwhile, with a deposition time of 60 minutes and a lattice spacing of 14.5 Å, the existence of the bulk phase was verified in the pentacene film. Atomic force microscopy (AFM) images of the crystallinity of the pentacene films revealed that the pentacene films deposited on ITO-coated glass exhibited the formation of similar islands with modular grains, results in a fine crystalline structure. From the current-voltage (I-V) and current density-voltage (J-V) characteristics, the pentacene films were ohmic and that current increased as the pentacene’s thickness decreased. Pentacene films deposited on an ITO-coated glass substrate showed potential in the development of broadband and narrowband optoelectronic devices on a transparent substrate.

Optical and Electrical Properties of Indium Tin Oxide (ITO) Thin Films Prepared by Thermal Evaporation Method on Polyethylene Terephthalate (PET) Substrate

2012 ◽  
Vol 545 ◽  
pp. 393-398 ◽  
Author(s):  
Mohammed Khalil Mohammed Ali ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin ◽  
M.G. Faraj
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Thermal Evaporation Method ◽  
Ito Thin Films ◽  
Ito Films

This work describe the optical and electrical properties of indium tin oxide (ITO) thin films prepared by thermal evaporation method on flexible plastic substrate (polyethylene terephthalate (PET)). The optical transmission and absorption of ITO films in the visible and UV rang have been studied. The resistivity, sheet resistant, carrier concentration and mobility have been evaluated by Hall Effect measurement. The surface morphology and roughness were investigated by atomic force microscopy (AFM). The results indicate that the optical transmission greater than 85% over the visible rang and it was found to be strongly dependent on the thickness of ITO films. The Resistivity and sheet resistant with low values (10-4Ω-cm, 9.22 Ω/ respectively) were obtained and ties values were increased with ITO thin films thickness increasing .AFM investigation showed that the roughness surface of (8 – 30) RMS have been obtained over different thickness of ITO films. The obtained results of the deposited films by this method were analyzed. Details of sample preparation, experimental methods and results are given and discussed.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

Optimization of Electrodeposition Time on the Properties of Cu2ZnSnS4 Thin Films for Thin Film Solar Cell Applications

2021 ◽  
Author(s):  
Muhammad Aamir Shafi ◽  
Amal Bouich ◽  
Laiq Khan ◽  
Hanif Ullah ◽  
Julia Mari Guaita ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Thin Layer ◽  
Indium Tin Oxide ◽  
Time Variation ◽  
Thin Film Solar Cell ◽  
Deposition Time ◽  
Simulation Software ◽  
Czts Thin Films

Abstract Electrochemical deposition was used to create a quaternary CZTS (Cu2ZnSnS4) kesterite thin layer. An aqueous solution of CZTS was used to deposit a thin layer over Indium Tin Oxide. The effects of deposition time (variation) on CZTS thin films under ambient conditions were investigated in this study. Several available characterization systems were used to study the samples as they were produced. The polycrystalline description of the layer is inveterate by X-ray diffraction (XRD). The SEM as well as AFM study show that deposition time improved surface morphology and topography of CZTS thin films which increase several nm in grain size. Furthermore, depending upon the deposition duration, the optical study reveals an acceptable bandgap in a range of 1.44 to 1.71 eV. Characteristics of high-quality CZTS absorber layers for solar cell applications are discovered to be affected by deposition time variation. To check the effect of this bandgap variation (1.44 to 1.71 eV) on the performance of a CZTS based thin film solar cell, a simulation software SCAPS-1D is being used.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

scholarly journals Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures

2019 ◽  
Vol 2019 ◽  
pp. 1-10
Author(s):  
Faheem Amin ◽  
Syedah Afsheen Zahra ◽  
Muhammad Sultan ◽  
Sajjad Hussain Mirza ◽  
Fahad Azad
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Rutherford Backscattering ◽  
Bandgap Engineering ◽  
Thermal Evaporation Method ◽  
Annealing Temperatures ◽  
Cds Thin Films

Bilayer thin films of Ge/CdS have been deposited on a glass substrate through thermal evaporation method. The obtained Ge/CdS samples were annealed at temperatures up to 400°C to observe the resulting effect on the structural changes in the film. The bandgap of the annealed films was found to increase with increasing annealing temperature which can be attributed to the increased interlayer diffusion. The interlayer diffusion was found to take effect above a temperature of 300°C which was confirmed by the Rutherford backscattering technique. Complementary XPS was done to investigate the surface stoichiometry of the bilayers.

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