scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 15-25
Author(s):  
Hien Sy Dinh
Keyword(s):  
Green Function ◽  
Function Method ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 5-16
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Spin Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Spin Fet

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

scholarly journals Simulation and Modeling of Silicon Based Single Electron Transistor

2018 ◽  
Vol 8 (2) ◽  
pp. 900
Author(s):  
Malik Ashter Mehdy ◽  
Mariagrazia Graziano ◽  
Gianluca Piccinini
Keyword(s):  
Transmission Spectrum ◽  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot ◽  
Proposed Model ◽  
Current Voltage ◽  
Transport Direction ◽  
Silicon Based ◽  
Non Equilibrium

<p>In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.</p>

scholarly journals Some physical results of single electron transitor

2018 ◽  
Vol 1 (6) ◽  
pp. 206-213
Author(s):  
Minh Hoang Le ◽  
Hien Sy Dinh
Keyword(s):  
Research Area ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Feature Size ◽  
Coulomb Oscillation ◽  
Quantum Device ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Coulomb Staircase

Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated.

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

The Green function method for the two-surface problem

1970 ◽  
Vol 8 (13) ◽  
pp. 1069-1071 ◽  
Author(s):  
F. Flores ◽  
F. Garcia-Moliner ◽  
J. Rubio
Keyword(s):  
Green Function ◽  
Function Method ◽  
Green Function Method ◽  
The Green Function
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