The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Sub-5 µm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic Substrate

1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L770-L773 ◽  
Author(s):  
Kenichi Ishii ◽  
Hideshi Nishikawa ◽  
Tetsuo Takahashi ◽  
Yutaka Hayashi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Alumina Ceramic ◽  
Ceramic Substrate ◽  
Crystalline Silicon Solar Cell

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽  
2016 ◽  
Vol 2 (29) ◽  
pp. 1533-1538 ◽  
Author(s):  
S. Ishihara ◽  
Y. Hibino ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Formation ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

scholarly journals Light absorption enhancement in ultrathin film solar cell with embedded dielectric nanowires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Mahmoud A. Elrabiaey ◽  
Mohamed Hussein ◽  
Mohamed Farhat O. Hameed ◽  
Salah S. A. Obayya
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Light Absorption ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Optical Path Length ◽  
Photocurrent Density ◽  
Absorption Enhancement ◽  
Crystalline Silicon Solar Cell ◽  
Novel Design

Abstract A novel design of thin-film crystalline silicon solar cell (TF C-Si-SC) is proposed and numerically analyzed. The reported SC has 1.0 µm thickness of C-Si with embedded dielectric silicon dioxide nanowires (NWs). The introduced NWs increase the light scattering in the active layer which improves the optical path length and hence the light absorption. The SC geometry has been optimized using particle swarm optimization (PSO) technique to improve the optical and electrical characteristics. The suggested TF C-Si-SC with two embedded NWs offers photocurrent density ($${J}_{ph}$$ J ph ) of 32.8 mA cm−2 which is higher than 18 mA cm−2 of the conventional thin film SC with an enhancement of 82.2%. Further, a power conversion efficiency of 15.9% is achieved using the reported SC.

Poly-SiGe TFTs Fabricated by Low Temperature Chemical Vapor Deposition at 450°C

2001 ◽  
Vol 686 ◽  
Author(s):  
Kousaku Shimizu ◽  
Jianjun Zhang ◽  
Jeong-woo Lee ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Polycrystalline Materials ◽  
Si Substrates ◽  
Vapor Deposition Technique

AbstractLow temperature growth of poly-SiGe has been investigated by reactive thermal chemical vapor deposition technique, which is a newly developed technique for preparing polycrystalline materials with using redox reactions in a set of source materials, Si2H6 and GeF4.. In order to prepare high uniformity and reproducibility of Si-rich poly-SiGe, total pressure, gas flow ratio, and residence time are optimized at 450°C of substrate temperature. Through optimizing the conditions, poly-Si1−xGex (x<0.04) films have been prepared in the reproducibility more than 90% and uniformity more than 88%. Bottom gate type of n-channel thin film transistors has been fabricated in various grain size of poly-Si1−xGex on SiO2 (100nm)/Si substrates. 5-36 cm2/Vs of field effect mobility of thin film transistors (L/W = 50μm/50μm) have been achieved after hydrogenation, whose threshold voltage is around 2±0.5V, and on/off ratio is more than 104.

Sign in / Sign up

Export Citation Format

Share Document