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Performance Evaluation of Graded Channel Dual Material Double Gate Engineered Nanowire Transistor (GC-DMDG NWT) with High-K Gate Dielectrics
Journal of Nanoengineering and Nanomanufacturing
◽
10.1166/jnan.2016.1284
◽
2016
◽
Vol 6
(3)
◽
pp. 185-187
Author(s):
Pankaj Appun Pegu
◽
Uttam Chandra Boro
Keyword(s):
Performance Evaluation
◽
Gate Dielectrics
◽
Double Gate
◽
Nanowire Transistor
◽
High K
◽
Dual Material
Download Full-text
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Performance Scrutiny of Source and Drain-Engineered Dual-Material Double-Gate (DMDG) SOI MOSFET with Various High-K
Advances in Intelligent Systems and Computing - Intelligent Engineering Informatics
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10.1007/978-981-10-7566-7_53
◽
2018
◽
pp. 533-539
Author(s):
Himanshu Yadav
◽
R. K. Chauhan
Keyword(s):
Double Gate
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◽
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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET
2019 Devices for Integrated Circuit (DevIC)
◽
10.1109/devic.2019.8783284
◽
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◽
Cited By ~ 1
Author(s):
Pritha Banerjee
◽
Priyanka Saha
◽
Dinesh Kumar Dash
◽
Subir Kumar Sarkar
Keyword(s):
Surface Potential
◽
Analytical Modeling
◽
Double Gate
◽
Gate Stack
◽
High K
◽
Double Gate Mosfet
◽
Dual Material
Download Full-text
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation
Microelectronics Reliability
◽
10.1016/j.microrel.2011.02.004
◽
2011
◽
Vol 51
(6)
◽
pp. 1105-1112
◽
Cited By ~ 6
Author(s):
Swagata Bhattacherjee
◽
Abhijit Biswas
Keyword(s):
Performance Analysis
◽
Carrier Concentration
◽
Gate Dielectrics
◽
Double Gate
◽
High K
Download Full-text
A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics
Solid-State Electronics
◽
10.1016/j.sse.2007.01.026
◽
2007
◽
Vol 51
(3)
◽
pp. 387-393
◽
Cited By ~ 21
Author(s):
T.K. Chiang
◽
M.L. Chen
Keyword(s):
Threshold Voltage
◽
Gate Dielectrics
◽
Double Gate
◽
High K
◽
Threshold Voltage Model
Download Full-text
Performance evaluation of novel low leakage Double-gate FinFET device at sub-22nm with LaAlO3 high-k gate oxide and TiN metal gate using quantum modeling
2014 International Conference on Electronics and Communication Systems (ICECS)
◽
10.1109/ecs.2014.6892692
◽
2014
◽
Cited By ~ 2
Author(s):
Subha Subramaniam
◽
Sangeeta M. Joshi
◽
R. N. Awale
Keyword(s):
Performance Evaluation
◽
Gate Oxide
◽
Double Gate
◽
Metal Gate
◽
Low Leakage
◽
High K
◽
Tin Metal
◽
Quantum Modeling
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Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study
Silicon
◽
10.1007/s12633-018-9826-z
◽
2018
◽
Vol 10
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◽
pp. 2865-2875
◽
Cited By ~ 16
Author(s):
Vadthiya Narendar
◽
Kalola Ankit Girdhardas
Keyword(s):
Surface Potential
◽
Double Gate
◽
Performance Study
◽
Gate Stack
◽
High K
◽
Channel Gate
◽
High K Dielectric
◽
Rf Performance
◽
Dual Material
Download Full-text
Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance
Silicon
◽
10.1007/s12633-020-00783-w
◽
2020
◽
Author(s):
Arighna Basak
◽
Angsuman Sarkar
Keyword(s):
Drain Current
◽
Double Gate
◽
Gate Stack
◽
High K
◽
Double Gate Mosfet
◽
Rf Performance
◽
Dual Material
◽
Current Modelling
Download Full-text
Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics
Applied Physics Letters
◽
10.1063/1.2206555
◽
2006
◽
Vol 88
(24)
◽
pp. 243513
◽
Cited By ~ 60
Author(s):
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◽
Kimoon Lee
◽
Jae Hoon Kim
◽
Seongil Im
◽
Chang Su Kim
◽
...
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Low Voltage
◽
Gate Dielectrics
◽
High Mobility
◽
Double Gate
◽
High K
Download Full-text
A Holistic Approach on Junctionless Dual Material Double Gate (DMDG) MOSFET with High k Gate Stack for Low Power Digital Applications
Silicon
◽
10.1007/s12633-019-00128-2
◽
2019
◽
Vol 12
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◽
pp. 393-403
◽
Cited By ~ 7
Author(s):
S. Darwin
◽
T. S. Arun Samuel
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Low Power
◽
Holistic Approach
◽
Double Gate
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Gate Stack
◽
High K
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Dual Material
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Performance evaluation of nanoscale halo dual-material double gate SiGe MOSFET using 2-D numerical simulation
Materials Today Proceedings
◽
10.1016/j.matpr.2019.10.073
◽
2020
◽
Vol 20
◽
pp. 348-355
Author(s):
Toufik Bentrcia
◽
Fayçal Djeffal
◽
Mohamed Chahdi
Keyword(s):
Numerical Simulation
◽
Performance Evaluation
◽
Double Gate
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Dual Material
Download Full-text
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