Nanoscale Mechanical Properties of In-Situ Tribofilms Generated from ZDDP and F-ZDDP with and without Antioxidants

2007 ◽  
Vol 7 (12) ◽  
pp. 4378-4390 ◽  
Author(s):  
Anuradha Somayaji ◽  
Ramoun Mourhatch ◽  
Pranesh B. Aswath

Tribofilms with thickness ranging from 100–200 nm were developed in-situ during wear tests using a zinc dialkyl dithiophosphates (ZDDP) and fluorinated ZDDP (F-ZDDP). The influence of the antioxidant alkylated diphenyl amine on the formation and properties of these tribofilm is examined. Results indicate that the thickness of the tribofilms formed when F-ZDDP is used is always thicker than the tribofilm formed with ZDDP. In addition, in the presence of antioxidants the tribofilm thickness is increased. The hardness of these tribofilms in the absence of the antioxidants is significantly higher at the near surface region (0–30 nm) when compared to the films formed in the presence of antioxidant. Nanoscratch tests conducted to examine the abrasion resistance of the tribofilms also indicate that the tribofilms formed by F-ZDDP are more resistant to scratch compared to films formed by ZDDP. In the presence of antioxidant, tribofilms formed by F-ZDDP are significantly thicker while both films behave in a similar fashion in nanoscratch tests. Transmission electron microscopy of the wear debris formed during the tests were examined and results indicate the nucleation and growth of nanoparticles of Fe3O4 with an approximate size of 5–10 nm embedded within an otherwise amorphous tribofilm.

1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.


2019 ◽  
Vol 12 (10) ◽  
pp. 3144-3155 ◽  
Author(s):  
Zheng-Long Xu ◽  
Sung Joo Kim ◽  
Donghee Chang ◽  
Kyu-Young Park ◽  
Kyun Seong Dae ◽  
...  

The nucleation and growth of lithium sulfides are directly observed by liquid in situ transmission electron microscopy.


2005 ◽  
Vol 20 (7) ◽  
pp. 1684-1694 ◽  
Author(s):  
Guangwen Zhou ◽  
Judith C. Yang

The initial oxidation stages of Cu(100), (110), and (111) surfaces have been investigated by using in situ ultra-high-vacuum transmission electron microscopy (TEM) techniques to visualize the nucleation and growth of oxide islands. The kinetic data on the nucleation and growth of oxide islands shows a highly enhanced initial oxidation rate on the Cu(110) surface as compared with Cu(100), and it is found that the dominant mechanism for the nucleation and growth is oxygen surface diffusion in the oxidation of Cu(100) and (110). The oxidation of Cu(111) shows a dramatically different behavior from that of the other two orientations, and the in situ TEM observation reveals that the initial stages of Cu(111) oxidation are dominated by the nucleation of oxide islands at temperatures lower than 550 °C, and are dominated by two-dimensional oxide growth at temperatures higher than 550 °C. This dependence of the oxidation behavior on the crystal orientation and temperature is attributed to the structures of the oxygen-chemisorbed layer, oxygen surface diffusion, surface energy, and the interfacial strain energy.


1989 ◽  
Vol 146 ◽  
Author(s):  
Ivo J.M.M. Raaijmakers ◽  
Leo J. van Ijzendoorn ◽  
Anton M.L. Theunissen ◽  
Ki-Bum Kim

ABSTRACTIt is known that thermal annealing of Ti and amorphous (α) Si first results in an amorphous silicide, after which the crystalline disilicide grows under diffusion control. The situation with respect to the reaction of Ti with crystalline (x) Si is much less clear. We have investigated the reaction of Ti with xSi with (high resolution) cross-section transmission electron microscopy and in-situ Rutherford backscattering spectroscopy. It is shown that an amorphous silicide can also be formed on crystalline Si. The presence of this amorphous silicide as a precursor to the C49TiSi2 phase is suggested to be an important issue in the nucleation and growth of the disilicide.


2014 ◽  
Vol 20 (2) ◽  
pp. 407-415 ◽  
Author(s):  
Dipanjan Bhattacharya ◽  
Michel Bosman ◽  
Venkata R.S.S. Mokkapati ◽  
Fong Yew Leong ◽  
Utkur Mirsaidov

AbstractThe origin of the condensation of water begins at the nanoscale, a length-scale that is challenging to probe for liquids. In this work we directly image heterogeneous nucleation of water nanodroplets by in situ transmission electron microscopy. Using gold nanoparticles bound to a flat surface as heterogeneous nucleation sites, we observe nucleation and growth of water nanodroplets. The growth of nanodroplet radii follows the power law: R(t)~(t−t0)β, where β~0.2−0.3.


1991 ◽  
Vol 238 ◽  
Author(s):  
A. J. Pedraza ◽  
M. J. Godbole ◽  
L. Romana

ABSTRACTSapphire substrates, mechanically polished to an optical finish, were annealed for two days at either 1000°C or 1350°C. The near surface condition of as-polished and of the annealed substrates was analyzed by Rutherford backscattering/channeling (RBS-C) and by scanning electron microscopy/channeling (SEM-C), by transmission electron microscopy (TEM), and by scanning tunnelling microscopy (STM). The polished substrates were found to be RBS-amorphous up to 100 nm, and heavily damaged at larger depths. In agreement with these results, no electron channeling was obtained from polished samples. TEM, however, showed that the damaged region was crystalline, and the only defects detected were microtwins. Both RBS-C and SEM-C analyses revealed that the damage is removed when the sapphire substrates are annealed for 48 hrs. at 1350°C. The condition of the near-surface region, viz., as-polished or annealed, is found to strongly affect the morphology of the laser-irradiated copper films deposited on sapphire substrates. A correlation is found between the threshold for film evaporation and for film rupture upon laser irradiation, both being a function of the substrate condition. It is concluded that the near-surface damaged layer acts as a thermal barrier for heat transport across the substrate.


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