Luminescence Properties of SnO2 Nanoparticles Dispersed in Eu3+ Doped SiO2 Matrix

SnO2:5Tb (SnO2 doped with 5 at% Tb3+) nanoparticles were synthesised by a polyol method and their luminescence properties at different annealing temperatures were studied.

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Synthesis and luminescence properties of SnO2 nanoparticles

Chemical Physics Letters ◽

10.1016/s0009-2614(03)00440-8 ◽

2003 ◽

Vol 372 (3-4) ◽

pp. 451-454 ◽

Cited By ~ 293

Author(s):

Feng Gu ◽

Shu Fen Wang ◽

Chun Feng Song ◽

Meng Kai Lü ◽

Yong Xin Qi ◽

...

Keyword(s):

Sno2 Nanoparticles ◽

Luminescence Properties

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Luminescence Properties of SnO2 Nanoparticles Dispersed in Eu3+ Doped SiO2 Matrix

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.18215 ◽

2008 ◽

Vol 8 (3) ◽

pp. 1489-1493 ◽

Cited By ~ 12

Author(s):

R. S. Ningthoujam ◽

V. Sudarsan ◽

A. Vinu ◽

P. Srinivasu ◽

K. Ariga ◽

...

Keyword(s):

Energy Transfer ◽

Sno2 Nanoparticles ◽

Phase Segregation ◽

The Other ◽

Significant Extent ◽

Sio2 Matrix ◽

Transmission Electron ◽

Heat Treated ◽

The Matrix ◽

Different Temperatures

SnO2 nanoparticles dispersed in Eu3+ doped silica (SnO2-SiO2:Eu3+) were prepared at a low temperature (185 °C) in ethylene glycol medium. Transmission electron microscopy studies on as-prepared samples have established that SnO2 nanoparticles having size of 4.6 nm are uniformly covered by the SiO2 matrix. Significant extent of exciton mediated energy transfer between SnO2 and Eu3+ ions in heat treated SnO2-SiO2:Eu3+ samples has been attributed to the diffusion of Eu3+ ions from the SiO2 matrix to the near vicinity of SnO2 nanoparticles and its incorporation in the SnO2 matrix. On the other hand, very weak energy transfer exists for SnO2:Eu3+ nanoparticles heated at different temperatures due to the phase segregation of Eu3+ ions from the matrix.

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Synthesis，structures and luminescence properties of SnO2 nanoparticles

Acta Physica Sinica ◽

10.7498/aps.58.5821 ◽

2009 ◽

Vol 58 (8) ◽

pp. 5821

Author(s):

Lin Tao ◽

Wan Neng ◽

Han Min ◽

Xu Jun ◽

Chen Kun-Ji

Keyword(s):

Sno2 Nanoparticles ◽

Luminescence Properties

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Mn-doping-induced tunable bandgap and luminescence properties of SnO2 nanoparticles grown by SILAR method

Optical Materials ◽

10.1016/j.optmat.2021.111606 ◽

2021 ◽

Vol 121 ◽

pp. 111606

Author(s):

Muhammed Emin Güldüren ◽

Ahmet Taşer ◽

Harun Güney

Keyword(s):

Sno2 Nanoparticles ◽

Luminescence Properties ◽

Silar Method ◽

Mn Doping ◽

Tunable Bandgap

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Microstructure and luminescence properties of Co-doped SnO2 nanoparticles synthesized by hydrothermal method

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-007-9543-7 ◽

2008 ◽

Vol 19 (8-9) ◽

pp. 868-874 ◽

Cited By ~ 52

Author(s):

L. M. Fang ◽

X. T. Zu ◽

Z. J. Li ◽

S. Zhu ◽

C. M. Liu ◽

...

Keyword(s):

Hydrothermal Method ◽

Sno2 Nanoparticles ◽

Luminescence Properties ◽

Co Doped

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Luminescence from individual dislocations in II-VI and III-V semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088488 ◽

1991 ◽

Vol 49 ◽

pp. 834-835

Author(s):

J W Steeds

Keyword(s):

Group Iv ◽

Luminescence Properties ◽

Carrier Recombination ◽

Transmission Electron ◽

Wide Range ◽

Basic Physics ◽

Semiconducting Compounds ◽

Diamond Group ◽

Non Destructive ◽

Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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