Investigation Based on Nano-Electromechanical System Double Si3N4 Resonant Beam Pressure Sensor

2011 ◽  
Vol 11 (12) ◽  
pp. 10854-10858 ◽  
Author(s):  
Chuan Yang ◽  
Can Guo ◽  
Xiaowei Yuan
2012 ◽  
Vol 14 (12) ◽  
pp. 123037 ◽  
Author(s):  
Fredrik Hocke ◽  
Xiaoqing Zhou ◽  
Albert Schliesser ◽  
Tobias J Kippenberg ◽  
Hans Huebl ◽  
...  

2011 ◽  
Vol 483 ◽  
pp. 224-227 ◽  
Author(s):  
Zheng Yuan Zhang ◽  
Yong Mei ◽  
Jian Gen Li ◽  
Xiao Gang Li ◽  
Zhi Cheng Feng

A Si-based resonant pressure sensor structure with dual-beam was proposed to solve the problem of serious temperature drift in thermal excited Si-based resonant pressure sensor. In this structure, temperature variation sensed by non-pressure-sensing resonant beam was subtracted from that sensed by pressure-sensing beam, to cancel variations of the pressure-sensing beam with temperature and compensate for temperature drift of thermal-excited Si-based resonant pressure sensor. A prototype of Si-based resonant pressure sensor with dual-beam was developed. Preliminary test results showed that the effect of temperature drift was reduced to 1/30 of the uncompensated device, greatly improving sensing accuracy of thermal excited Si-based resonant pressure sensor.


2012 ◽  
Vol 61 (1) ◽  
pp. 010701
Author(s):  
Xu Yue-Hang ◽  
Guo Yun-Chuan ◽  
Wu Yun-Qiu ◽  
Xu Rui-Min ◽  
Yan Bo

Nanoscale ◽  
2021 ◽  
Author(s):  
Bin Shi ◽  
Xuehui Gan ◽  
Yitian Peng ◽  
Haojie Lang ◽  
kun zou ◽  
...  

Atomically thin two-dimensional molybdenum disulfide (MoS2) is well known for its excellent lubricating characteristics and is usually used as a solid lubricant in diverse micro/nano electromechanical system (MEMS/NEMS). The friction...


2012 ◽  
Vol 550-553 ◽  
pp. 3376-3379
Author(s):  
Xin Shi ◽  
Zheng Zheng Guan ◽  
Hua Wu

Silicon micro resonant pressure sensor and accelerometer are kinds of new gauging instruments. Both the silicon micro resonant pressure sensor and accelerometer have the particular advantages and become the key development direction of micro sensors. The introduction of silicon micro resonant pressure sensor is carried out first in this paper. The work theory and development tendency of resonant pressure sensor are discussed in detail. And then, the silicon resonant accelerometer is studied. The research development statuses of resonant beam accelerometer and development tendency are taken to analysis in this paper.


2013 ◽  
Vol 10 (4) ◽  
pp. 983-988 ◽  
Author(s):  
Long Ma ◽  
Wanqing Li ◽  
Qi Wang ◽  
Xiaochun Zhang ◽  
Yanzhong Jin ◽  
...  

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