Structural Characteristics of Phosphorus-Doped C60 Thin Film Prepared by Radio Frequency-Plasma Assisted Thermal Evaporation Technique

This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

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A comprehensive study of molybdenum boats behavior during service life for continuous thermal evaporation technique, used in thin film technology

Vacuum ◽

10.1016/j.vacuum.2020.109167 ◽

2020 ◽

Vol 176 ◽

pp. 109167

Author(s):

Sina Rouhi ◽

Jose Enrique Martinez-Medina ◽

Mehtap Ozdemir ◽

Mehmet Ertugrul ◽

Gulnur Aygun ◽

...

Keyword(s):

Thin Film ◽

Service Life ◽

Thermal Evaporation ◽

Thermal Evaporation Technique ◽

Thin Film Technology ◽

Evaporation Technique ◽

Comprehensive Study

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On the Role of Tin Doping in InOx Thin Films Deposited by Radio Frequency-Plasma Enhanced Reactive Thermal Evaporation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2010.1436 ◽

2010 ◽

Vol 10 (4) ◽

pp. 2713-2716 ◽

Cited By ~ 4

Author(s):

A. Amaral ◽

P. Brogueira ◽

G. Lavareda ◽

C. Nunes de Carvalho

Keyword(s):

Thin Films ◽

Radio Frequency ◽

Thermal Evaporation ◽

Radio Frequency Plasma ◽

Frequency Plasma

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Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.301.95 ◽

2006 ◽

Vol 301 ◽

pp. 95-98 ◽

Cited By ~ 2

Author(s):

Masashi Yamashita ◽

Yukari Ishikawa ◽

Hitoshi Ohsato ◽

Noriyoshi Shibata

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Radio Frequency Plasma ◽

Group Iii ◽

Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

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