Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements

2012 ◽  
Vol 12 (2) ◽  
pp. 1344-1347
Author(s):  
Young-Su Park ◽  
Soo-Jin Kim ◽  
Si-Hoon Lyu ◽  
Byoung Hoon Lee ◽  
Myung Mo Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Memory Effect ◽  
Thin Film Transistors ◽  
Metallic Nanoparticles ◽  
Charge Trapping ◽  
Zno Thin Film

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

2011 ◽  
Vol 21 (4) ◽  
pp. 1102-1108 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Kyoohee Woo ◽  
Dongjo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Microwave Assisted ◽  
Temperature Solution ◽  
Solution Processable

Low Temperature Post-Annealing of ZnO Thin-Film Transistors with High-k Gate Dielectrics

2019 ◽  
Vol 16 (9) ◽  
pp. 315-322 ◽  
Author(s):  
Henry J. H. Chen ◽  
Barry B. Yeh ◽  
Wei-Yang Chou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
Post Annealing ◽  
High K

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

61.1: Invited Paper: ZnO Thin Film Transistors and Circuits on Flexible Polymeric Substrates by Low-Temperature PEALD

2010 ◽  
Vol 41 (1) ◽  
pp. 909
Author(s):  
Dalong A. Zhao ◽  
Devin A. Mourey ◽  
Ho Him R. Fok ◽  
Yuanyuan V. Li ◽  
Thomas N. Jackson
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Polymeric Substrates

Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors

2009 ◽  
Vol 39 (5) ◽  
pp. 554-558 ◽  
Author(s):  
Dalong Zhao ◽  
Devin A. Mourey ◽  
Thomas N. Jackson
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Zno Thin Film

Low temperature processing of Al2O3-GPTMS-PMMA hybrid films with applications to high-performance ZnO thin-film transistors

2019 ◽  
Vol 467-468 ◽  
pp. 456-461 ◽  
Author(s):  
J. Meza-Arroyo ◽  
M.G. Syamala Rao ◽  
I. Mejia ◽  
M.A. Quevedo- López ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Hybrid Films ◽  
Low Temperature Processing

High-Performance ZnO Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method

2012 ◽  
Vol 12 (7) ◽  
pp. 5783-5787 ◽  
Author(s):  
Po-Yu Yang ◽  
Jyh-Liang Wang ◽  
Wei-Chih Tsai ◽  
Yu-Cheng Chang ◽  
Shui-Jinn Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Hydrothermal Method ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Crystal Grains

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

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