A Technique for the Non-Destructive EUV Mask Sidewall Angle Measurement Using Scanning Electron Microscope

2013 ◽  
Vol 13 (12) ◽  
pp. 8032-8035
Author(s):  
Sangheon Lee ◽  
Junhwan Lee ◽  
Sanghyun Ban ◽  
Hye-Keun Oh ◽  
Byungho Nam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Angle Measurement ◽  
Sidewall Angle ◽  
Non Destructive ◽  
Scanning Electron

scholarly journals Performance Management of Transmission Line Tower Foundations against Corrosion by Non Destructive Testing

2020 ◽  
Vol 9 (3) ◽  
pp. 443-447 ◽  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Transmission Line ◽  
Performance Management ◽  
Mineralogical Composition ◽  
Ultrasonic Pulse Velocity ◽  
Pulse Velocity ◽  
Cell Potential ◽  
Non Destructive ◽  
Scanning Electron

In this paper, corrosion in overhead line foundations in different field environmental conditions (plain, agricultural and coastal/industrial region) have been detected by non-destructive test methods such as Half-cell potential test, Ultrasonic pulse velocity test, Rebound hammer test, chemical analysis of soil and Transmission Line Tower (TLT) footing concrete samples and scanning electron microscope (SEM) analysis of deteriorated tower footing concrete. The collected soil samples have been analyzed for chemicals and the TLT coping concrete samples have been tested using scanning electron microscope. The correlation between the test values, mineralogical composition of soil and concrete samples at tower footing level is presented.

Combined Electron Excitation and X-Ray Excitation for Spectrometry in the SEM

2013 ◽  
Vol 21 (4) ◽  
pp. 24-28 ◽  
Author(s):  
Kenny C. Witherspoon ◽  
Brian J. Cross ◽  
Mandi D. Hellested
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Electron Excitation ◽  
X Rays ◽  
X Ray ◽  
Analytical Technique ◽  
Atomic Electrons ◽  
Non Destructive ◽  
Scanning Electron

Energy-dispersive X-ray spectrometry (EDS) is an analytical technique used to determine elemental composition. It is a powerful, easy-to-use, non-destructive technique that can be employed for a wide variety of materials. In this technique the electron beam of the scanning electron microscope (SEM) impinges on the sample and excites atomic electrons causing the production of characteristic X rays. These characteristic X rays have energies specific to elements in the sample. The EDS detector collects these X rays as a signal and produces a spectrum. Samples also can be excited by X rays. Collimated and focused X rays from an X-ray source produce characteristic X rays that can be detected by the same EDS detector. When X rays are used as the source of excitation, the method is then called X-ray fluorescence (XRF) or micro-XRF.

Principles and Possibilities of Backscattered Electron Micro-Tomography in the Scanning Electron Microscope

1997 ◽  
Vol 3 (S2) ◽  
pp. 497-498
Author(s):  
E I Rau ◽  
VNE Robinson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Ion Beam ◽  
Three Dimensional ◽  
Major Disadvantage ◽  
Layer Structures ◽  
Backscattered Electron ◽  
Micro Tomography ◽  
Non Destructive ◽  
Scanning Electron

Multi layer structures are widely used in micro electronics devices and visualisation of their sub surface layers is important to understand the nature and properties of these devices. One of the more common methods of sub surface imaging is ion beam milling, in which sections of the overlaying material are removed to reveal sub surface details. Some disadvantages of this technique are that the equipment required is expensive and the technique is destructive. Another technique is to image a device at different accelerating voltages and determine at which voltage a particular feature is first detected. A major disadvantage of this technique is that the underlying layers are always observed partially obscured by the overlaying material. The development of a non destructive technique for three dimensional characterisation of electronic, physical, compositional and/or topological properties of these structures could be useful.One such technique is micro tomography using the backscattered electron (BSE) signal in the scanning electron microscope SEM [1].

scholarly journals Quantifying the Comprehensive Characteristics of Inclusion-Induced Defects Using an Integrated Destructive and Non-Destructive Method

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1475
Author(s):  
Rongfei Juan ◽  
Min Wang ◽  
Junhe Lian ◽  
Chao Gu ◽  
Lanxin Li ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
High Strength Steels ◽  
Integrated Approach ◽  
Extreme Value Analysis ◽  
Steel Matrix ◽  
Distribution Analysis ◽  
Value Analysis ◽  
Non Destructive ◽  
Scanning Electron

Driven by the continuous improvement of the mechanical properties, especially the fatigue property of the high-strength steels, it is particularly important to characterize the type, size, and distribution of inclusions and the critical inclusions in the steel matrix, as they are decisive for the fatigue life performance. This paper presents an integrated approach for the comprehensive characterization of the inclusions in metals by combining the advantages of destructive methods based on metallography and non-destructive testing methods using ultrasonic detection technology. The position and size of inclusions were obtained by scanning ultrasonic microscope, and the composition and micro-image of inclusions were further analyzed by scanning electron microscope. According to the results obtained by the proposed approach, the distribution laws of oxide inclusions and sulfide inclusions in the samples were statistically analyzed, and then the maximum distribution analysis method was used to predict the maximum inclusions. We compare the predicted size value with the value obtained by the characterization method to establish a certain corresponding relationship. The results show that large defects in metals can be accurately characterized by the proposed method, and the size of inclusions predicted by extreme value analysis is close to that of the scanning electron microscope. The integrated destructive and non-destructive method can reveal the in situ information of inclusions and give the possible relationship between inclusions and process and material properties.

Microstructural evolution in sintered ice particles containing NaCl observed by low-temperature scanning electron microscope

2007 ◽  
Vol 221 (3) ◽  
pp. 151-156 ◽  
Author(s):  
J R Blackford ◽  
C E Jeffree ◽  
D F J Noake ◽  
B A Marmo
Keyword(s):  
Electron Microscope ◽  
Low Temperature ◽  
Scanning Electron Microscope ◽  
Dihedral Angle ◽  
Angle Measurement ◽  
Model Material ◽  
Ice Particles ◽  
Temperature Scanning ◽  
Equilibrium Morphology ◽  
Scanning Electron

Ice particles containing NaCl were made by spraying 0.043 M salt solution into liquid nitrogen. The ice particles were packed into capsules and annealed at -8 °C for 168 h and -25 °C for 20 h. This material can be considered as a model material for sintered snow containing impurities. The capsules were fractured open inside the low-temperature scanning electron microscope, which minimized the artefacts caused by cryofixation. The morphology of the sintered structure was observed with low-temperature scanning electron microscope. The microstructure of the sintered material consists of ice grains with a liquid meniscus containing NaCl between the grains. This structure is similar to the equilibrium morphology of water-filled veins in polycrystalline ice and liquid phase sintered metallic materials. The combined effect of the surface energies between the solid, liquid, and vapour governs the morphology of the microstructure. A dihedral angle where the brine intersects a grain boundary in ice of 8.0 ± 2.6°, and a contact angle for brine on ice at the interface with vapour of 5.0 ± 1.3° were measured, for samples quenched from -8 °C. Using the dihedral angle measurement, a surface energy value for ice-brine of 32.6 ± 0.1 mJ/m2 was calculated.

Applications of the Scanning Electron Microscope on Active Semiconductor Devices

1970 ◽  
Vol 28 ◽  
pp. 378-379 ◽  
Author(s):  
Robert D. Dobrott
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Semiconductor Devices ◽  
Electrical Potential ◽  
Electrical Characteristics ◽  
Scanning Microscope ◽  
Bulk Properties ◽  
Potential Gradients ◽  
Non Destructive ◽  
Scanning Electron

The scanning electron microscope is rapidly becoming an extremely powerful tool for studying active semiconductor devices. This tool gives an essentially non-destructive means of studying both the bulk and surface electrical characteristics of the device under high magnification. The mapping of electrical potential gradients on the surface of a device under bias is a valuable aid in reliability prediction as well as failure anal-sis of completely non-working or marginally operating devices. Bulk properties (i.e. p-n or isolation junctions) can be studied in the scanning microscope using the specimen conductive mode. This paper will be restricted to the surface potential gradients using the emissive mode(secondary electron signal) for image display.

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