Structure and Characteristics of Li-Doped NiO Thin Films Prepared by Using Pulsed-Laser Deposition Process

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

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Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

Journal of Materials Research ◽

10.1557/jmr.2010.0266 ◽

2010 ◽

Vol 25 (10) ◽

pp. 1936-1942 ◽

Cited By ~ 2

Author(s):

Deuk Ho Yeon ◽

Bhaskar Chandra Mohanty ◽

Yeon Hwa Jo ◽

Yong Soo Cho

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Surface Coverage ◽

Hole Concentration ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Average Size

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

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Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2009.09.002 ◽

2010 ◽

Vol 30 (2) ◽

pp. 447-451 ◽

Cited By ~ 1

Author(s):

Hsiu-Fung Cheng ◽

Yu-Wen Chen ◽

P.T. Joseph ◽

Chuan-Chic Hung ◽

Horng-Yi Chiang ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Dielectric And Optical Properties

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Gasdynamics and Chemistry in The Pulsed Laser Deposition of Oxide Dielectric Thin Films

MRS Proceedings ◽

10.1557/proc-334-305 ◽

1993 ◽

Vol 334 ◽

Cited By ~ 1

Author(s):

John W. Hastie ◽

David W. Bonnell ◽

Albert J. Paul ◽

Peter K. Schenck

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Recent Work ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Research Groups ◽

Dielectric Thin Films ◽

Modeling Approaches

AbstractIn the context of “chemistry and its effects on film quality,” we and a number of other research groups have developed spectroscopic and modeling approaches to better define the pulsed laser deposition process. An overview of these approaches is given here, using the results of recent work performed in our laboratory on the oxide dielectric systems of BaTiO3 and PbZr0.53Ti0.47O3(PZT).

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Characteristics of Ba(Mg1∕3Ta2∕3)O3 thin films prepared by pulsed laser deposition process and their effect on the growth of Pb(Zr1−xTix)O3 thin films

Journal of Applied Physics ◽

10.1063/1.1777398 ◽

2004 ◽

Vol 96 (10) ◽

pp. 5701-5705 ◽

Cited By ~ 3

Author(s):

I-Nan Lin ◽

Chen-Wei Liang ◽

Ying-Hao Chu ◽

Su-Jien Lin

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition

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Processing and characterization of compositionally modified PbTiO3 thin films prepared by pulsed laser deposition

Journal of Materials Research ◽

10.1557/jmr.1997.0073 ◽

1997 ◽

Vol 12 (2) ◽

pp. 509-517 ◽

Cited By ~ 7

Author(s):

B. W. Lee ◽

L. P. Cook ◽

P. K. Schenck ◽

W. Wong-Ng ◽

C. K. Chiang ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Homogeneous Surface ◽

Post Annealing ◽

Oriented Films

Modified lead titanate of 0.9PbTiO3 −0.1Pb(Mg0.5 W0.5)O3 thin films have been deposited onto Pt-coated Si substrates by pulsed laser deposition. Films were crystallized in situ during deposition or by post-depositional heat treatment (post-annealing). Compositional and structural characterization showed that the phase formation and microstructure of the films were highly sensitive to deposition conditions. Perovskite single phase films were formed in situ at 650 °C, PO2 = 40 Pa as well as by post-annealing amorphous films at 650 °C. In the post-annealing process, the amorphous as-deposited phase was crystallized to perovskite and/or pyrochlore, and the ratio of perovskite to pyrochlore was found to be influenced by the depositional PO2. Depending on the deposition temperature, the grain structures of the crystallized films were columnar or equiaxed. A relatively homogeneous surface morphology was obtained by deposition at a lower pressure (PO2 = 13 Pa). The in situ crystallized films showed variable crystallographic orientation. The more (111) oriented films had the lowest remanent polarizations and the highest coercive fields. A method for preparing randomly oriented films, via a two-step deposition process with intermediate annealing, is believed to give the most consistent results and the best ferroelectric properties at the present level of development.

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