Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

2006 ◽  
Vol 252 (10) ◽  
pp. 3783-3788 ◽  
Author(s):  
T. García ◽  
E. de Posada ◽  
P. Bartolo-Pérez ◽  
J.L. Peña ◽  
R. Diamant ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Plzt Thin Films

Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

2005 ◽  
Vol 44 (11) ◽  
pp. 7896-7900 ◽  
Author(s):  
Takahiro Nagata ◽  
Young-Zo Yoo ◽  
Parhat Ahmet ◽  
Toyohiro Chikyow
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Single Crystalline

Cross-Sectional Nanoindentation of Alumina Thin Films Deposited by Pulsed Laser Deposition Process

2006 ◽  
Author(s):  
Sudheer Neralla ◽  
Sergey Yarmolenko ◽  
Dhananjay Kumar ◽  
Devdas Pai ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Hardness ◽  
Deposition Process ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Atomic Force

Alumina is a widely used ceramic material due to its high hardness, wear resistance and dielectric properties. The study of phase transformation and its correlation to the mechanical properties of alumina is essential. In this study, interfacial adhesion properties of alumina thin films are studied using cross-sectional nanoindentation (CSN) technique. Alumina thin films are deposited at 200 and 700 °C, on Si (100) substrates with a weak Silica interface, using pulsed laser deposition (PLD) process. Effect of annealing on the surface morphology of the thin films is studied using atomic force microscopy. Xray diffraction studies revealed that alumina thin films are amorphous in nature at 200 °C and polycrystalline with predominant gamma alumina phase at 700 °C.

Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

2004 ◽  
Vol 818 ◽  
Author(s):  
H. Kawasaki ◽  
Y. Suda ◽  
T. Ohshima ◽  
T. Ueda ◽  
S. Nakashima
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Nano Particles ◽  
Laser Deposition ◽  
Laser Beams ◽  
Silicon Carbon

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

Synthesis and characterization of PLZT thin films obtained by pulsed laser deposition

2004 ◽  
Vol 79 (4-6) ◽  
pp. 1283-1285 ◽  
Author(s):  
P. Verardi ◽  
F. Craciun ◽  
N. Scarisoreanu ◽  
G. Epurescu ◽  
M. Dinescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
Plzt Thin Films

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

2010 ◽  
Vol 25 (10) ◽  
pp. 1936-1942 ◽  
Author(s):  
Deuk Ho Yeon ◽  
Bhaskar Chandra Mohanty ◽  
Yeon Hwa Jo ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Surface Coverage ◽  
Hole Concentration ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Average Size

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process

2010 ◽  
Vol 30 (2) ◽  
pp. 447-451 ◽  
Author(s):  
Hsiu-Fung Cheng ◽  
Yu-Wen Chen ◽  
P.T. Joseph ◽  
Chuan-Chic Hung ◽  
Horng-Yi Chiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Dielectric And Optical Properties
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