Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3327-3331 ◽  
Author(s):  
Hideto Shibao ◽  
Yoshio Nakahara ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Uv Light ◽  
Limiting Factor ◽  
Dielectric Layers ◽  
Linker Molecules ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers

2016 ◽  
Vol 16 (4) ◽  
pp. 3273-3276 ◽  
Author(s):  
Yu Matsuda ◽  
Yoshio Nakahara ◽  
Daisuke Michiura ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Low Cost ◽  
High Mobility ◽  
Hole Mobility ◽  
Plastic Substrates ◽  
Active Layers ◽  
Dielectric Layers ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78±0.3 cm2V−1s−1, which are comparable to those of the previously reported transistors using singlecrystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. It is therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Thermoset polymers consisting of novolac and melamine derivatives as insulators for organic thin-film transistors

2015 ◽  
Vol 3 (15) ◽  
pp. 3623-3628 ◽  
Author(s):  
Jong-Woon Ha ◽  
Jae-Ho Jang ◽  
Yongnam Kim ◽  
Jin-Kyun Lee ◽  
Jeonghun Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Catalytic Amount ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Gate Dielectric Material

A potential gate dielectric material that can be cured and processed at low temperatures was designed and synthesized via the cross-linking of bisphenol A novolac (Novolac) and hexamethoxymethylmelamine (HMMM) in the presence of a catalytic amount of p-toluenesulfonic acid.

scholarly journals Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Chalcogenide Thin Film
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