Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the advancement of this rapidly expanding technology, a 3D 14-nm SOI n-FinFET is performed and calibrated to the experimental data from IBM by using Silvaco TCAD tools. The calibrated TCAD model is then investigated to analyze the impact of changing the fin width, fin height, gate dielectric material, and gate length on the DC and RF parameters. The achieved results allow gaining a better understanding and a deeper insight into the effects of varying the physical dimensions and materials on the device performance, thereby enabling the fabrication of a device tailored to the given constraints and requirements. After analyzing the optimal values from different changes, a new device configuration is proposed, which shows a good improvement in electrical characteristics.

Simulations of the CNFETs using different high-k gate dielectrics

In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2. It was also observed that as thickness of gate dielectric material reduces, drain current of CNFET increases. The outcomes of this study matches with the analytical results and hence confirm the results