Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type

Water-Induced Scandium Oxide Dielectric for Low-Operating Voltage n- and p-Type Metal-Oxide Thin-Film Transistors

2015 ◽  
Vol 25 (46) ◽  
pp. 7180-7188 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Huijun Song ◽  
Byoungchul Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Scandium Oxide ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Metal Oxide Thin Film ◽  
P Type

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

2016 ◽  
Vol 4 (45) ◽  
pp. 10715-10721 ◽  
Author(s):  
Chundan Zhu ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Guixia Jiang ◽  
You Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
High K ◽  
Metal Oxide Thin Film ◽  
P Type

High-performance n- and p-type metal-oxide thin-film transistors are fabricated on ZrOx high-k dielectrics via a nontoxic water-inducement method.

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