Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

2016 ◽  
Vol 4 (45) ◽  
pp. 10715-10721 ◽  
Author(s):  
Chundan Zhu ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Guixia Jiang ◽  
You Meng ◽  
...  

High-performance n- and p-type metal-oxide thin-film transistors are fabricated on ZrOx high-k dielectrics via a nontoxic water-inducement method.

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.


2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document