Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4188-4192
Author(s):  
Shang Hao Piao ◽  
Hyeonju Lee ◽  
Jaehoon Park ◽  
Hyoung Jin Choi
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Solution Process ◽  
Experimental Result ◽  
Mixed Solution ◽  
Organic Thin Film ◽  
Insulator Layers ◽  
High Dielectric

We fabricate 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs) with nanocomposite insulators. The insulator layers consist of both poly(4-vinylphenol-co-methyl methacrylate) and high-dielectric constant hafnium oxide (HfO2) nanoparticles. The HfO2 nanoparticles are ball-milled for sufficient dispersion in a nanocomposite solution to enable solution process methods to be used in preparing the insulator layers. The nanocomposite insulators demonstrate high capacitances and improve the performance of TIPS-Pn TFTs. Nonetheless, particle aggregates are produced in the nanocomposites solution with high HfO2 concentrations, generating detrimental effects on the dielectric properties and the TFT performance. Our experimental result implies that the optimum concentration of HfO2 nanoparticles in a mixed solution will find to be ~11.5 wt%.

A novel functional polyurethane as a dielectric layer for organic thin-film transistors

2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Dielectric

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

Organic Thin Film Transistors Fabricated by a Solution Process Using Direct Patterned Single-Layer Graphene Electrodes

2020 ◽  
Vol 20 (10) ◽  
pp. 6435-6440
Author(s):  
Do-Kyung Kim ◽  
Jae-Hyung Han ◽  
Muhan Choi. ◽  
Jin-Hyuk Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Soft Lithography ◽  
Solution Process ◽  
Single Layer ◽  
Organic Thin Film Transistors ◽  
Single Layer Graphene ◽  
Metal Catalyst ◽  
Organic Thin Film ◽  
Layer Graphene

We propose the direct transfer method of single-layer graphene (SLG) from metal catalyst Cu-foil to a polymeric insulator and the direct patterning method of the SLG for electrodes of organic thin-film transistors (OTFTs) without contamination using soft-lithography. Through soft-lithography, SLG can be formed in various patterns relatively easily in comparison with the conventional photolithography method that has multiple complex process steps to make graphene patterns. Furthermore, the 6,13-bis(triisopropylsilylethynyl) pentacene OTFTs are fabricated in solution with SLG source and drain electrodes. As a result, the field-effect mobility of OTFTs based on SLG electrodes was enhanced about 4 times in comparison with that of OTFTs using typical metal electrodes due to the decrease in contact resistance.

Organic Thin-Film Transistors on a Plastic Substrate with Anodically Oxidized High-Dielectric-Constant Insulators

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 299-304 ◽  
Author(s):  
Yoshiki Iino ◽  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Hideo Fujikake ◽  
Hiroto Sato ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
High Dielectric

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

2009 ◽  
Vol 95 (24) ◽  
pp. 243302 ◽  
Author(s):  
Ying Wang ◽  
Orb Acton ◽  
Guy Ting ◽  
Tobias Weidner ◽  
Hong Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Low-Voltage Organic Thin Film Transistors on Flexible Plastic Substrates with Anodized Ta2O5 Gate Insulators

2002 ◽  
Vol 736 ◽  
Author(s):  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Yoshiki Iino ◽  
Hiroshi Kikuchi ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Light Emitting ◽  
Plastic Substrates ◽  
High Dielectric ◽  
A Current

ABSTRACTOrganic thin film transistors (OTFTs) that operate at low voltage were fabricated using a tantalum oxide (Ta2O5) gate insulator on plastic substrates. The Ta2O5 insulator was prepared by anodizing a Ta gate electrode. The high dielectric constant of the Ta2O5 enabled the OTFTs to operate at a lower voltage than those of previous devices. The OTFTs exhibited a high field-effect mobility of 0.35 - 0.51 cm2/Vs, and a current on/off ratio of 105-106 at gate voltages of less than 5 V. The threshold voltage of -1.1 V and the subthreshold slope of 0.2 V/decade were the best among those reported to date. We also demonstrated operation of a phosphorescent organic light-emitting device (OLED) with the OTFT operating at a low voltage.

EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS

2011 ◽  
Vol 25 (01) ◽  
pp. 91-99
Author(s):  
WENQING ZHU ◽  
LING CHEN ◽  
XIANG LIU ◽  
YU BAI ◽  
BIN WEI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface States ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Order Of Magnitude ◽  
Modified Layer ◽  
Insulator Layers ◽  
Surface Modified

The performance of organic thin film transistors (OTFTs) strongly depends on the surface states of the gate insulator. Top-contact (TC) OTFTs with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted of SiO 2 as the gate insulator and OTS (octadecyltrichlorosilane) or PMMA (Poly (methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10-3 cm 2/ Vs , which was twice that of the untreated OTFT. The on/off current ratio was increased one order of magnitude and reached more than 104. The leakage current was decreased from 10-9 A to 10-10 A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs.

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