Efficiency Enhancement by Insertion of ZnO Recombination Barrier Layer in CdS Quantum Dot-Sensitized Solar Cells

2021 ◽  
Vol 21 (7) ◽  
pp. 3800-3805
Author(s):  
Abdul Razzaq ◽  
Muhammad Zafar ◽  
Tahir Saif ◽  
Jun Young Lee ◽  
Jung Ki Park ◽  
...  

In this investigation we report the formation of thin ZnO recombination barrier layer at TiO2/CdS interface aimed for the improvement in performance of CdS sensitized solar cell. The film was deposited upon nanocrystalline mesoporous TiO2 surface by following a simple chemical process and characterized, using UV-Visible spectroscopy, X-ray diffraction and electron dispersive X-ray measurements. The insertion of ZnO thin layer enhances the QDSC (Quantum dot sensitized solar cell) performance, contributed mainly by an increase in open circuit voltage (Voc) due to reduced electron back transfer from TiO2 conduction band. Moreover, the analysis of photovoltaic characteristics upon increasing the thickness of the ZnO film reveals that the ZnO recombination barrier layer with optimum thickness at porous TiO2/CdS interface proved to be an effective potential barrier for minimizing electron back recombination.

2007 ◽  
Vol 1031 ◽  
Author(s):  
Christopher Bailey ◽  
Cory Cress ◽  
Ryne Raffaelle ◽  
Seth Hubbard ◽  
William Maurer ◽  
...  

AbstractThe effects of strain within stacked layers of InAs quantum dots (QDs) were investigated. InAs QD test structures with and without strain compensation (SC) were analyzed using atomic force microscopy, transmission electron microscopy, and X-ray diffraction. The affects of strain compensation on test structure morphology and on GaAs-based QD solar cell performance was studied as a function of the thickness of the SC layer. X-ray diffraction analysis of the QD embedded test structures reveals a relationship between the SC thickness and the observed crystalline quality. Air mass zero illuminated current vs. voltage data and spectral responsivity measurements were used for the solar cell comparison. When SC is employed, QD insertion shows a lower open circuit voltage, in reference to a baseline device without QDs, but leads to an enhancement in the short circuit current of the device.


Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 609 ◽  
Author(s):  
Charith Jayathilaka ◽  
Loku Singgappulige Rosantha Kumara ◽  
Koji Ohara ◽  
Chulho Song ◽  
Shinji Kohara ◽  
...  

Cuprous oxide (Cu2O) homojunction thin films on Ti substrates were fabricated by an electrochemical deposition in which a p-Cu2O layer was deposited on an n-Cu2O layer by carefully controlled bath conditions. It was found that the open-circuit voltage of the homojunction solar cell was significantly influenced by the pH of the lactate bath. The variation of the pH was used to achieve the best possible crystal orientation for homojunctions. The crystallinity and morphology of the products were characterized by X-ray diffraction (XRD), high-energy x-ray diffraction (HEXRD), and scanning electron microscopy (SEM). The current density voltage (J-V) analysis showed that the sulfur treatment and annealing enhanced the photocurrent by ten-fold compared to the untreated and unannealed homojunction solar cell. X-ray photoelectron spectroscopy (XPS) studies confirmed that the sulfur treatment eliminated the surface CuO and formed a thin layer of CuS, which was very useful to make the front Ohmic contact. Transient measurements confirmed that the p-type Cu2O layer, which was subjected to sulfur treatment, significantly reduced the recombination, thus enhancing the efficiency of the solar cell. The best sulfur treated annealed Ti/n-Cu2O/p-Cu2O/Au solar cell produced an energy conversion efficiency of 2.64% with an open-circuit voltage of 490 mV and a short circuit current density of 12.8 mA cm−2 under AM 1.5 illumination.


2011 ◽  
Vol 399-401 ◽  
pp. 1429-1432 ◽  
Author(s):  
Ping Fang Tao ◽  
Jun He ◽  
Chun Jie Liang ◽  
Jian Peng Han ◽  
Li Qin Qin ◽  
...  

ZnO; Quantum Dot-sensitized Solar Cell; CdSe; Photoelectrochemical property Abstract: ZnO nanotubes (NTs) were successfully fabricated with a hydrothermal method at low temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) have been utilized to characterize the samples. The ZnO nanotubes, sensitized by CdSe, were used as a photoanode of a quantum dot sensitized solar cell, which generated a maximum power conversion efficiency of 0.95%.


RSC Advances ◽  
2012 ◽  
Vol 2 (20) ◽  
pp. 7843 ◽  
Author(s):  
Kehan Yu ◽  
Xiu Lin ◽  
Ganhua Lu ◽  
Zhenhai Wen ◽  
Chris Yuan ◽  
...  

Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.


1997 ◽  
Vol 306 (2) ◽  
pp. 198-204 ◽  
Author(s):  
A.A. Darhuber ◽  
J. Stangl ◽  
V. Holy ◽  
G. Bauer ◽  
A. Krost ◽  
...  

2014 ◽  
Vol 137 ◽  
pp. 700-704 ◽  
Author(s):  
Ting Shu ◽  
Xiong Li ◽  
Zhi-Liang Ku ◽  
Shi Wang ◽  
Shi Wu ◽  
...  

2012 ◽  
Author(s):  
Ανδρόνικος Μπαλάσκας

Υβριδικές επιστρώσεις οργανικά τροποποιημένων πυριτικών ενώσεων και εποξειδικώνρητινών (Organically Modified Silicates, ORMOSILs – epoxy) εφαρμόστηκαν στο κράμααργιλίου 2024-Τ3 και σε γαλβανισμένο χάλυβα σε υψηλές θερμοκρασίες (Hot Dip GalvanizedSteel, HDGS) προκειμένου αυτές να προστατεύσουν τα υποστρώματα από τη διάβρωση. Για τηνβελτίωση της αντοχής των επιστρώσεων στην διάβρωση ενσωματώθηκαν στην πολυμερικήμήτρα νανοπεριέκτες από μολυβδαινικό δημήτριο (CeMo) και οξείδιο του τιτανίου (TiO2),καθώς και pH-ευαίσθητα οργανικά νανοδοχεία πληρωμένα με τους αναστολείς διάβρωσης 2-μερκαπτοβενζοθειαζόλιο, 8-υδροξυκινολίνη, 1H-βενζοτριαζολο-4-σουλφονικό οξύ καιεξαφλουοροτιτανικό οξύ.Οι υβριδικές επιστρώσεις εφαρμόστηκαν στο υπόστρωμα με τη διαδικασία εμβάπτισης.Η μορφολογία των επιστρώσεων εξετάστηκε με ηλεκτρονική μικροσκοπία σάρωσης (ScanningElectron Microscopy (SEM)). Η σύνθεση και η δομή τους μελετήθηκε με υπέρυθρηΦασματοσκοπία μετασχηματισμού Fourier (FT-IR) και με μικροανάλυση με φθορισμομετρίαακτίνων Χ (Energy Dispersive X-Ray Analysis (EDX)). H ηλεκτροχημική φασματοσκοπίασύνθετης αντίστασης (Electrochemical Impedance Spectroscopy, EIS), η dc-πόλωση (dcpolarization)και η μέτριση ανοικτού δυναμικού (open circuit potential, OCP) χρησιμοποιήθηκανγια την αξιολόγηση των αντι-διαβρωτικών ιδιοτήτων των επιστρώσεων. Τα αποτελέσματαέδειξαν ότι οι επιστρώσεις με πληρωμένα νανοδοχεία έχουν αυξημένες αντιδιαβρωτικέςιδιότητες συγκριτικά με τις υπόλοιπες επιστρώσεις εμφανίζοντας και ιδιότητες αυτο-θεραπείας.Τέλος, συντέθηκαν νανόσφαιρες οξειδίου του χαλκού (Cu2O), οι οποίεςχαρακτηρίστηκαν με SEM, ηλεκτρονική μικροσκοπία διερχόμενης δέσμης (ΤransmissionΕlectron Μicroscopy (TEM)) και περίθλαση ακτίνων Χ (X ray Diffraction (XRD)). Οινανόσφαιρες στη συνέχεια πληρώθηκαν με ουσίες που δρουν ως βιοκτόνα και ενσωματώθηκανσε βαφές εμπορίου και σε επιστρώσεις βασισμένες σε εποξειδικές ενώσεις και μελετήθηκε ηδράση τους ως αντιαποθετικά αντιδραστήρια. Τα αποτελέσματα έδειξαν ότι οι επιστρώσεις μεπληρωμένες νανόσφαιρες Cu2O είχαν μεγαλύτερη αποτελεσματικότητα σε σύγκριση με τιςβαφές εμπορίου με βιοκτόνα μετά από έκθεση σε θαλάσσιο περιβάλλον.


2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

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