Subthreshold Performance of In1– xGax As Based Dual Metal with Gate Stack Cylindrical/Surrounding Gate Nanowire MOSFET for Low Power Analog Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2017.1961 ◽

2017 ◽

Vol 12 (2) ◽

pp. 171-176 ◽

Author(s):

Sanjeev Kumar Sharma ◽

Balwinder Raj ◽

Mamta Khosla

Keyword(s):

Low Power ◽

Surrounding Gate ◽

Nanowire Mosfet

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Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Physica Scripta ◽

10.1088/1402-4896/ac33fd ◽

2021 ◽

Vol 96 (12) ◽

pp. 124055

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R S Gupta

Keyword(s):

Temperature Dependency ◽

Accumulation Mode ◽

Surrounding Gate ◽

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Analog Performance of Dual- Metal Gate Stack Architecture of Junctionless Accumulation-Mode Cylindrical Surrounding Gate (DMGSA-JAM-CSG) MOSFET

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455896 ◽

2021 ◽

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R. S. Gupta

Keyword(s):

Accumulation Mode ◽

Analog Performance ◽

Surrounding Gate ◽

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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2016.04.017 ◽

2016 ◽

Vol 83 ◽

pp. 95-100 ◽

Author(s):

J. Charles Pravin ◽

D. Nirmal ◽

P. Prajoon ◽

J. Ajayan

Keyword(s):

Low Power ◽

High K ◽

Nanowire Mosfet ◽

Nanoscale Circuits

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GaN based Dual-Metal Gate Stack Engineered Junctionless-Surrounding-Gate (DMSEJSG) MOSFET for High Power Applications

2019 IEEE 16th India Council International Conference (INDICON) ◽

10.1109/indicon47234.2019.9030261 ◽

2019 ◽

Author(s):

Anubha Goel ◽

Sonam Rewari ◽

Seema Verma ◽

R. S. Gupta

Keyword(s):

Surrounding Gate ◽

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Interface trap-dependent linearity assessment in single and dual metal gate junctionless accumulation mode (surrounding gate) nanowire MOSFET

Applied Physics A ◽

10.1007/s00339-019-2647-0 ◽

2019 ◽

Vol 125 (5) ◽

Author(s):

Nitin Trivedi ◽

Subhasis Haldar ◽

S. S. Deswal ◽

Mridula Gupta ◽

R. S. Gupta

Keyword(s):

Interface Trap ◽

Accumulation Mode ◽

Surrounding Gate ◽

Nanowire Mosfet

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Analytical modeling of dual-metal gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET

Applied Physics A ◽

10.1007/s00339-021-04652-0 ◽

2021 ◽

Vol 127 (7) ◽

Author(s):

Sumedha Gupta ◽

Neeta Pandey ◽

R. S. Gupta

Keyword(s):

Analytical Modeling ◽

Accumulation Mode ◽

Surrounding Gate ◽

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A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application

IEEE Access ◽

10.1109/access.2021.3097367 ◽

2021 ◽

Vol 9 ◽

pp. 101447-101453

Author(s):

Terirama Thingujam ◽

Quan Dai ◽

Eunjin Kim ◽

Jung-Hee Lee

Keyword(s):

Low Power ◽

Simulation Study ◽

Interface Charges ◽

Gan Nanowire ◽

Power Application ◽

Nanowire Mosfet

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Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523485 ◽

2013 ◽

Author(s):

J. Hoentschel ◽

Shiang Yang Ong ◽

T. Balzer ◽

N. Sassiat ◽

Ran Yan ◽

...

Keyword(s):

Low Power ◽

Work Function ◽

Function Optimization ◽

Ultra Low Power ◽

Dependent Strain

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Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaab01 ◽

2018 ◽

Vol 33 (3) ◽

pp. 035013 ◽

Author(s):

Meng-Chen Tsai ◽

Chin-I Wang ◽

Yen-Chang Chen ◽

Yi-Ju Chen ◽

Kai-Shin Li ◽

...

Keyword(s):

Low Power ◽

Buffer Layer ◽

Power Device ◽

Short Channel Effects ◽

Short Channel ◽

High K ◽

Channel Effects ◽

Device Applications

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Traps induced Greens function based mathematical modeling for BaTiO3–SrTiO3 gate stack dual metal GAA MOSFET

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab3f02 ◽

2019 ◽

Vol 34 (11) ◽

pp. 115002

Author(s):

Tushar Gauba ◽

Yogesh Pratap ◽

Sonam Rewari ◽

R S Gupta

Keyword(s):

Mathematical Modeling ◽

Greens Function ◽

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