Study of Bonded Wafers by Using a Synchrotron Radiation Transmission X-ray Microscopy for Three-Dimensional Integrated Circuit
2020 ◽
Vol 15
(7)
◽
pp. 904-908
Keyword(s):
X Ray
◽
Synchrotron radiation transmission X-ray microscopy (SRTXM) was applied for visualization of the interfacial layer in bonded wafer pairs. The X-ray energy of 6.54 keV with a monitoring window was utilized to enhance a resolution of transmission X-ray microscopy (TXM). The monitoring window was designed a locally uncovered area of the bonded wafer pairs to make the thickness of bonded wafers less than 200 μm. The experimental results showed that the technique has sub-micron meter resolution. Also this technique can improve the resolution of the synchrotron X-ray for nanoelectronics application.