Effect of Oxygen Annealing on the Characteristics of Isotype Ga2O3/4H-SiC Heterojunction Diodes

2020 ◽  
Vol 15 (5) ◽  
pp. 561-565
Author(s):  
Young-Jae Lee ◽  
Michael A. Schweitz ◽  
Sang-Kwon Lee ◽  
Jung-Hyuk Koh ◽  
Sang-Mo Koo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Oxygen Atmosphere ◽  
Time Dependent ◽  
Temperature Step ◽  
Oxygen Annealing ◽  
Photo Response ◽  
Heterojunction Diodes ◽  
Effect Of Oxygen

Ga2O3/n-type 4H-SiC heterojunction diodes were fabricated by depositing Ga2O3 thin films on off-axis cut n type 4H-SiC substrates by RF magnetron sputtering. The influence of oxygen atmosphere annealing on the film quality and optical properties of Ga2O3 layers is investigated. The I–V characteristics of the diodes are acquired in the range from 25 to 175 °C with temperature step of 50 °C. The annealed diodes exhibit improved rectifying ratio (∼1 × 108 for ±2V) and an improved ideality factor (1.83) at 25 °C. Additionally, the photodiode that was annealed in the presence of an oxygen atmosphere shows an increased photocurrent, higher responsivity and an improved time dependent photo-response than as-grown devices.

Effect of Oxygen Annealing on the Electrical and Optical Properties of Zinc Oxide Thin Film

2015 ◽  
Vol 1109 ◽  
pp. 598-602 ◽  
Author(s):  
Mohd Nizar Zainol ◽  
Shafinaz Sobihana Shariffudin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Oxide Thin Film ◽  
Oxygen Annealing ◽  
Effect Of Oxygen

This paper presents on the effect of oxygen annealing on the electrical properties and optical properties. Sol gel spin coating is used to deposit zinc oxide thin films on glass substrates to obtain the uniform thin films. Here, the ZnO thin films were annealed in oxygen environment with various oxygen concentration of 20 to 40 sccm. This metal oxide has shown its ability as a very high optical transmittance which at 20 sccm thin films give the highest transmittance that is 97.44% and at 40 sccm thin films give the lowest transmittance that is 87.61%. Next, this metal oxide also has shown its ability in fairly good electrical properties which the lowest resistivity at 40 sccm thin films is 1.61× 104 Ωcm-1.

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

scholarly journals Optical Properties and Microstructure of TiNxOy and TiN Thin Films before and after Annealing at Different Conditions

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 22 ◽  
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman S. El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pure Titanium ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Optical Absorbance ◽  
Atomic Force ◽  
Before And After ◽  
Tin Thin Films ◽  
Steel Substrates

TiN and TiNxOy thin films share many properties such as electrical and optical properties. In this work, a comparison is conducted between TiN (with and without annealing at 400 °C in air and vacuum) and TiNxOy thin films deposited by using RF magnetron sputtering with the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time on stainless steel substrates. In the case of TiNxOy thin film, oxygen was pumped in addition. The optical properties of the thin films were characterized by spectrophotometer, and Fourier transform infrared spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that both thin films have metal-like behavior with some similarities in phases, structure, and microstructure and differences in optical absorbance. It is shown that the absorbance of TiN (after vacuum-annealing) and TiNxOy have close absorbance percentages at the visible range of light with an unstable profile, while after air-annealing the optical absorbance of TiN exceeds that of TiNxOy. This work introduces annealed TiN thin films as a candidate solar selective absorber at high-temperature applications alternatively to TiNxOy.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Investigation of annealing effects on optical properties of Ti thin films deposited by RF magnetron sputtering

Optik ◽  
2016 ◽  
Vol 127 (13) ◽  
pp. 5383-5389 ◽  
Author(s):  
I. Manouchehri ◽  
K. Gholami ◽  
B. Astinchap ◽  
R. Mordian ◽  
D. Mehrparvar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Annealing Effects
Sign in / Sign up

Export Citation Format

Share Document