Hysteresis Type Current–Voltage Characteristics of Indium Tin Oxide/Poly-[2-Methoxy-5-(2 -Ethyl-Hexyloxy)1,4-Phenylenevinylene] (MEHPPV) + Zinc Oxide (ZnO)/Al Structure: Towards Memory Device

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

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Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

INTERNATIONAL JOURNAL OF EXPERIMENTAL RESEARCH AND REVIEW ◽

10.52756/ijerr.2020.v22.001 ◽

2020 ◽

Vol 22 ◽

pp. 1-7

Author(s):

Abhijit Banerjee ◽

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electronic Devices ◽

Lead Sulphide ◽

Carrier Generation ◽

Current Voltage ◽

Photo Sensor ◽

Capacitance Voltage ◽

Definite Improvement ◽

Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

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Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Nanomaterials ◽

10.3390/nano9020178 ◽

2019 ◽

Vol 9 (2) ◽

pp. 178 ◽

Cited By ~ 1

Author(s):

Dong Lee ◽

G. Mohan Kumar ◽

P. Ilanchezhiyan ◽

Fu Xiao ◽

Sh.U. Yuldashev ◽

...

Keyword(s):

Tin Oxide ◽

Normal Condition ◽

Indium Tin Oxide ◽

Schottky Barrier Height ◽

Glass Substrates ◽

Transparent Conducting ◽

Current Voltage ◽

Ito Glass ◽

Ultrahigh Sensitivity ◽

Current Voltage Characteristics

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

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