Dislocation and Saturation Current Density Analysis by Rear-Side Al Amount Variation for n-Type Al-p+ Emitter Crystalline Silicon Solar Cell

2016 ◽  
Vol 8 (3) ◽  
pp. 563-568
Author(s):  
Cheolmin Park ◽  
Jonghwan Lee ◽  
Doohwan Yang ◽  
Nagarajan Balaji ◽  
Minkyu Ju ◽  
...  
2017 ◽  
Vol 54 (8) ◽  
pp. 080401
Author(s):  
胡凡 Hu Fan ◽  
曹双迎 Cao Shuangying ◽  
殷敏 Yin Min ◽  
陈小源 Chen Xiaoyuan ◽  
李东栋 Li Dongdong

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


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