scholarly journals Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Sang-Hyeok Cho ◽  
Kwanghee Cho ◽  
No-Won Park ◽  
Soonyong Park ◽  
Jung-Hyuk Koh ◽  
...  
2012 ◽  
Vol 100 (20) ◽  
pp. 203512 ◽  
Author(s):  
J. S. Moon ◽  
M. Antcliffe ◽  
H. C. Seo ◽  
D. Curtis ◽  
S. Lin ◽  
...  

2018 ◽  
Vol 20 (35) ◽  
pp. 22439-22444 ◽  
Author(s):  
Hyunik Park ◽  
Jihyun Kim

High-performance ambipolar black phosphorus field-effect transistors with low-resistance ohmic contacts were achieved via low-temperature vacuum annealing.


2008 ◽  
Vol 19 (34) ◽  
pp. 345203 ◽  
Author(s):  
Chan-Oh Jang ◽  
Tae-Hong Kim ◽  
Seung-Yong Lee ◽  
Dong-Joo Kim ◽  
Sang-Kwon Lee

2020 ◽  
Vol 55 (25) ◽  
pp. 11439-11450 ◽  
Author(s):  
Yuanyuan Pan ◽  
Jingrou Dai ◽  
Zihui Liu ◽  
Mingbo Wu ◽  
Han Hu ◽  
...  

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.


1989 ◽  
Vol 65 (9) ◽  
pp. 3546-3551 ◽  
Author(s):  
Masanori Murakami ◽  
W. H. Price ◽  
J. H. Greiner ◽  
J. D. Feder ◽  
C. C. Parks

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