Thermally stable ohmic contacts ton‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts

1989 ◽  
Vol 65 (9) ◽  
pp. 3546-3551 ◽  
Author(s):  
Masanori Murakami ◽  
W. H. Price ◽  
J. H. Greiner ◽  
J. D. Feder ◽  
C. C. Parks
2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Sang-Hyeok Cho ◽  
Kwanghee Cho ◽  
No-Won Park ◽  
Soonyong Park ◽  
Jung-Hyuk Koh ◽  
...  

2014 ◽  
Vol 26 (6) ◽  
pp. 2147-2154 ◽  
Author(s):  
Seungjib Yum ◽  
Tae Kyu An ◽  
Xiaowei Wang ◽  
Wonho Lee ◽  
Mohammad Afsar Uddin ◽  
...  

2020 ◽  
Vol 55 (25) ◽  
pp. 11439-11450 ◽  
Author(s):  
Yuanyuan Pan ◽  
Jingrou Dai ◽  
Zihui Liu ◽  
Mingbo Wu ◽  
Han Hu ◽  
...  

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.


2010 ◽  
Vol 107 (1) ◽  
pp. 014508 ◽  
Author(s):  
Lin Zhou ◽  
Jacob H. Leach ◽  
Xianfeng Ni ◽  
Hadis Morkoç ◽  
David J. Smith

2016 ◽  
Vol 37 ◽  
pp. 491-497 ◽  
Author(s):  
Jin-Guo Yang ◽  
Wei-Ling Seah ◽  
Han Guo ◽  
Jun-Kai Tan ◽  
Mi Zhou ◽  
...  

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