scholarly journals Structure Investigations of Islands with Atomic-Scale Boron–Carbon Bilayers in Heavily Boron-Doped Diamond Single Crystal: Origin of Stepwise Tensile Stress

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
S. N. Polyakov ◽  
V. N. Denisov ◽  
V. V. Denisov ◽  
S. I. Zholudev ◽  
A. A. Lomov ◽  
...  

AbstractThe detailed studies of the surface structure of synthetic boron-doped diamond single crystals using both conventional X-ray and synchrotron nano- and microbeam diffraction, as well as atomic force microscopy and micro-Raman spectroscopy, were carried out to clarify the recently discovered features in them. The arbitrary shaped islands towering above the (111) diamond surface are formed at the final stage of the crystal growth. Their lateral dimensions are from several to tens of microns and their height is from 0.5 to 3 μm. The highly nonequilibrium conditions of crystal growth enhance the boron solubility and, therefore, lead to an increase of the boron concentrations in the islands on the surface up to 1022 cm−3, eventually generating significant stresses in them. The stress in the islands is found to be the volumetric tensile stress. This conclusion is based on the stepwise shift of the diamond Raman peak toward lower frequencies from 1328 to 1300 cm−1 in various islands and on the observation of the shift of three low-intensity reflections at 2-theta Bragg angles of 41.468°, 41.940° and 42.413° in the X-ray diffractogram to the left relative to the (111) diamond reflection at 2theta = 43.93°. We believe that the origin of the stepwise tensile stress is a discrete change in the distances between boron–carbon layers with the step of 6.18 Å. This supposition explains also the stepwise (step of 5 cm−1) behavior of the diamond Raman peak shift. Two approaches based on the combined application of Raman scattering and X-ray diffraction data allowed determination of the values of stresses both in lateral and normal directions. The maximum tensile stress in the direction normal to the surface reaches 63.6 GPa, close to the fracture limit of diamond, equal to 90 GPa along the [111] crystallographic direction. The presented experimental results unambiguously confirm our previously proposed structural model of the boron-doped diamond containing two-dimensional boron–carbon nanosheets and bilayers.

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Ileana González-González ◽  
Camille Lorenzo-Medrano ◽  
Carlos R. Cabrera

Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD) films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.


2001 ◽  
Vol 10 (3-7) ◽  
pp. 750-754 ◽  
Author(s):  
N.G. Ferreira ◽  
E. Abramof ◽  
E.J. Corat ◽  
N.F. Leite ◽  
V.J. Trava-Airoldi

2018 ◽  
Vol 51 (5) ◽  
pp. 1372-1377 ◽  
Author(s):  
Hirotaka Yamaguchi ◽  
Akito Kuramata

Planar defects in (\overline{2}01)-oriented β-Ga2O3 wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X-ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on the (\overline{2}01) plane. The SF formation was found to be supported by a unique structural feature of the (\overline{2}01) plane as a slip plane; the (\overline{2}01) plane consists of close-packed octahedral Ga and O layers, allowing slips to form SFs. Vacancy arrays along the b axis in the octahedral Ga layer reduce the self-energy of the edge component in the partial dislocation extending along the b axis. It is speculated that the SFs occur during the crystal growth process for unknown reasons and then recover owing to elastic instability after initially increasing in size as crystal growth proceeds. Based on this analysis, a structural model for the SFs is proposed.


2011 ◽  
Vol 1282 ◽  
Author(s):  
Tomas L. Martin ◽  
Kane M. O’Donnell ◽  
Hidetsugu Shiozawa ◽  
Cristina E. Giusca ◽  
Neil A. Fox ◽  
...  

ABSTRACTThin lithium layers on oxygenated C(100) boron-doped diamond have been observed using x-ray photoemission spectroscopy. Conductive boron-doped diamond was oxygen-terminated using an ozone cleaner. Lithium was evaporated onto the oxygen-terminated C(100) surface and an as-grown hydrogen terminated surface to a thickness of approximately 50 nm. After washing with deionised water, significant lithium signal is still detected on oxygenated diamond, but not on hydrogenated diamond, indicating a strongly bound lithium-oxygen surface layer is formed, as predicted by recent theoretical modeling.


2008 ◽  
Vol 20 (14) ◽  
pp. 1556-1564 ◽  
Author(s):  
Takeshi Kondo ◽  
Yu Niwano ◽  
Akira Tamura ◽  
Tribidasari A. Ivandini ◽  
Yasuaki Einaga ◽  
...  

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