scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals Atomic layer deposited V2O5 coatings: a promising cathode for Li-ion batteries

2019 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Martyn Pemble ◽  
Ian Povey ◽  
Dimitra Vernardou
Keyword(s):  
Vanadium Pentoxide ◽  
Coulombic Efficiency ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition ◽  
Specific Discharge ◽  
Cathodic And Anodic Processes

A modified, thermal atomic layer deposition process was employed for the pulsed chemical vapor deposition growth of vanadium pentoxide films using tetrakis (dimethylamino) vanadium and water as a co-reagent.Depositions were carried out at 350oC for 400 pulsed CVD cycles, and samples were subsequently annealed for 1hour at 400°C in air to form materials with enhanced cycling stability during the continuous lithium-ion intercala­tion/deintercalation processes. The diffusion coefficient was estimated to be 2.04x10-10 and 4.10x10-10 cm2 s-1 for the cathodic and anodic processes, respectively. These values are comparable or lower than those reported in the literature, indicating the capability of Li+ of getting access into the vanadium pentoxide framework at a fast rate. Overall, it presents a specific discharge capacity of 280 mAh g-1, capacity retention of 75 % after 10000 scans, a coulombic efficiency of 100 % for the first scan, dropping to 85 % for the 10000th scan, and specific energy of 523 Wh g-1.

A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film

2006 ◽  
Vol 914 ◽  
Author(s):  
Kenichi Sekimoto ◽  
Taishi Furukawa ◽  
Noriaki Oshima ◽  
Ken-ichi Tada ◽  
Tetsu Yamakawa
Keyword(s):  
Argon Plasma ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Composition Analysis ◽  
1H And 13C Nmr ◽  
Layer Deposition ◽  
Tantalum Films

AbstractA novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al2O3 and graphene layers

MRS Advances ◽  
2016 ◽  
Vol 1 (20) ◽  
pp. 1401-1409 ◽  
Author(s):  
Gabriela B. Barin ◽  
Antonio G. Souza Filho ◽  
Ledjane S. Barreto ◽  
Jing Kong
Keyword(s):  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Graphene Layers ◽  
Deposition Parameters ◽  
Layer Deposition ◽  
Cvd Growth ◽  
Selective Chemical ◽  
Number Of Cycles

ABSTRACTFabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

scholarly journals TiO 2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

2019 ◽  
Vol 16 (12) ◽  
pp. 1900127 ◽  
Author(s):  
Morteza Aghaee ◽  
Joerie Verheyen ◽  
Alquin A. E. Stevens ◽  
Wilhelmus M. M. Kessels ◽  
Mariadriana Creatore
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition
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