Work Functions and Injection Barriers

2020 ◽  
pp. 59-74
Author(s):  
Juan Bisquert
Keyword(s):  
Work Functions

Electron and position work functions of Cr(100)

1983 ◽  
Vol 128 (1) ◽  
pp. A202
Author(s):  
R.J. Wilson ◽  
A.P. Mills
Keyword(s):  
Work Functions

John Bunyan’s Solomonic Pedagogy

2021 ◽  
pp. 073989132199601
Author(s):  
Robin Barfield
Keyword(s):  
Natural Theology ◽  
Work Functions ◽  
Holistic Vision

John Bunyan’s Book for Boys and Girls reflects a pre-Piagetian attempt to connect the temporal and spiritual in the life of the child. It is argued that this work functions as mediated symbolism in a form similar to Solomonic wisdom with its regulated natural theology. Bunyan’s work challenges some contemporary assumptions of formation and child theology. The article concludes with a call to reclaim a holistic vision of life and faith within child pedagogies.

Electrochemical Fabrication of Surface Chemical Gradients in Thiol Self-Assembled Monolayers with Tailored Work-Functions

Langmuir ◽  
2014 ◽  
Vol 30 (39) ◽  
pp. 11591-11598 ◽  
Author(s):  
Giulia Fioravanti ◽  
Francesca Lugli ◽  
Denis Gentili ◽  
Vittoria Mucciante ◽  
Francesca Leonardi ◽  
...  
Keyword(s):  
Self Assembled Monolayers ◽  
Surface Chemical ◽  
Chemical Gradients ◽  
Assembled Monolayers ◽  
Work Functions ◽  
Self Assembled ◽  
Electrochemical Fabrication

Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

2003 ◽  
Vol 82 (24) ◽  
pp. 4364-4366 ◽  
Author(s):  
Zhaojun Lin ◽  
Wu Lu ◽  
Jaesun Lee ◽  
Dongmin Liu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Barrier Heights ◽  
Work Functions ◽  
Metal Work

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

scholarly journals Metal Hexaboride Work Functions: Surface Configurations and the Electrical Double Layer from First-Principles

2018 ◽  
Vol 5 (3) ◽  
pp. 1800074 ◽  
Author(s):  
Kevin M. Schmidt ◽  
Scott T. Misture ◽  
Olivia A. Graeve ◽  
Victor R. Vasquez
Keyword(s):  
Double Layer ◽  
First Principles ◽  
Electrical Double Layer ◽  
Work Functions
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