Optical electron transitions in solids

2020 ◽  
pp. 93-121
Author(s):  
A. M. Kuznetsov
Keyword(s):  
Electron Transitions ◽  
Optical Electron

Optical electron transitions in a two-dimensional disordered semiconductor

1982 ◽  
Vol 25 (11) ◽  
pp. 994-996
Author(s):  
V. L. Bonch-Bruevich ◽  
To Tkhi Bik Nguet
Keyword(s):  
Two Dimensional ◽  
Electron Transitions ◽  
Optical Electron

Chemical Species Identification in an SEM by Changes in Emitted X-Ray Energies

1974 ◽  
Vol 32 ◽  
pp. 570-571
Author(s):  
R. H. Duff
Keyword(s):  
Species Identification ◽  
Valence Electron ◽  
Chemical Species ◽  
X Rays ◽  
Chemical Bonds ◽  
Small Shift ◽  
X Ray ◽  
Electron Transitions ◽  
Peak Energy ◽  
Chemical Combination

A material irradiated with electrons emits x-rays having energies characteristic of the elements present. Chemical combination between elements results in a small shift of the peak energies of these characteristic x-rays because chemical bonds between different elements have different energies. The energy differences of the characteristic x-rays resulting from valence electron transitions can be used to identify the chemical species present and to obtain information about the chemical bond itself. Although these peak-energy shifts have been well known for a number of years, their use for chemical-species identification in small volumes of material was not realized until the development of the electron microprobe.

Shake-up processes accompanying electron transitions in atoms

1982 ◽  
Vol 138 (12) ◽  
pp. 573 ◽  
Author(s):  
V.I. Matveev ◽  
E.S. Parilis
Keyword(s):  
Electron Transitions

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

Validation of New Mathematical Model of Flank Wear by Different Methods

2012 ◽  
Vol 729 ◽  
pp. 169-174 ◽  
Author(s):  
Zoltán Pálmai ◽  
Márton Takács ◽  
Balázs Zsolt Farkas
Keyword(s):  
Activation Energy ◽  
Mathematical Model ◽  
Flank Wear ◽  
Technological Parameters ◽  
Wear Process ◽  
Oxidation Processes ◽  
Industrial Manufacturing ◽  
Thermally Activated ◽  
Optical Electron ◽  
The Mean

Having reviewed the literature on cutting and based on the optical, electron-optical and morphological examinations of wear processes we have reached the conclusion that it is possible to describe the abrasive, adhesive and thermally activated diffusion, oxidation processes in a single mathematical model. The model is a non-linear autonomous differential equation, which can be solved by simple numerical methods. The complex wear equation was validated by the results of the cutting tests performed with P20 carbide on C45 carbon steel. If we have this data, we can calculate the activation energy of the process determining the nature of the wear process. The apparent activation energy of wear is Q=151,7kJ/mol. The model can even be used with changing technological parameters, and the data necessary for the constants of the wear equation may as well be determined even by measurements performed on the tool during industrial manufacturing. By the mean of this data, we can calculate the activation energy determining the nature of the wear process.

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