Lateral Vibration of Middle Cars of Shinkansen Train in Tunnel Section (Analysis of Running Characteristics of Test Train Due to Gap Flow Induced Model)

2021 ◽  
pp. 749-761
Author(s):  
Kenji Ueki ◽  
Koji Nakade ◽  
Hiroshi Fujimoto
Keyword(s):  
Lateral Vibration ◽  
Gap Flow ◽  
Tunnel Section ◽  
Section Analysis

Measures to Reduce the Lateral Vibration of the Tail Car in a High Speed Train

1996 ◽  
Vol 210 (2) ◽  
pp. 87-93 ◽  
Author(s):  
H Fujimoto ◽  
M Miyamoto
Keyword(s):  
Vibration Amplitude ◽  
High Speed ◽  
Vibration Mode ◽  
Simulation Analysis ◽  
Lateral Vibration ◽  
High Speed Train ◽  
Aerodynamic Forces ◽  
Vibration Data ◽  
Tunnel Section ◽  
Train Vibration

From the vibration data obtained simultaneously on several cars in the same Shinkansen train, it was observed that the vibration amplitude of the tail car is greater than those of the other cars in a train. The authors' analysis arrived at the conclusion that the vibration mode of a train has a tendency for the tail car to vibrate more than the others, when the carbody hunting characteristics of a train for the yawing mode are likely to emerge, and when aerodynamic forces work in a tunnel section. Referring to those results, by simulation analysis etc., it was found that two longitudinal dampers installed parallel between the car ends (Fig. 1) with their forces depending on the angular velocity between cars, are effective in decreasing the train vibration including the tail car's vibration. Then, the prototype of the longitudinal dampers between the cars for Shinkansen was designed by obtaining the proper damping coefficient through simulation. The effectiveness of the installed damper was verified when it was tested up to 310 km/h in the Shinkansen train.

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

scholarly journals From Exploratory Tunnel to Base Tunnel: Hard Rock TBM Performance Prediction by Means of a Stochastic Approach

2020 ◽  
Vol 53 (12) ◽  
pp. 5473-5487 ◽  
Author(s):  
Andrea Rispoli ◽  
Anna Maria Ferrero ◽  
Marilena Cardu
Keyword(s):  
Performance Prediction ◽  
Early Stage ◽  
Tunnel Boring Machine ◽  
Stochastic Approach ◽  
Critical Issue ◽  
Utilization Factor ◽  
Tbm Performance ◽  
Factors Affecting ◽  
Tunnel Section ◽  
Input Variables

AbstractTunnel boring machine (TBM) performance prediction is often a critical issue in the early stage of a tunnelling project, mainly due to the unpredictable nature of some important factors affecting the machine performance. In this regard, deterministic approaches are normally employed, providing results in terms of average values expected for the TBM performance. Stochastic approaches would offer improvement over deterministic methods, taking into account the parameter variability; however, their use is limited, since the level of information required is often not available. In this study, the data provided by the excavation of the Maddalena exploratory tunnel were used to predict the net and overall TBM performance for a 2.96 km section of the Mont Cenis base tunnel by using a stochastic approach. The preliminary design of the TBM cutterhead was carried out. A prediction model based on field penetration index, machine operating level and utilization factor was adopted. The variability of the parameters involved was analysed. A procedure to take into account the correlation between the input variables was described. The probability of occurrence of the outcomes was evaluated, and the total excavation time expected for the tunnel section analysed was calculated.

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