Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

2005 ◽  
Vol 880 ◽  
Author(s):  
Alice Bastos ◽  
Dierk Raabe ◽  
Stefan Zaefferer ◽  
Christopher Schuh

AbstractA Cobalt-20wt.% Nickel polycrystal produced by electrodeposition has been investigated in planar and cross sections using a high resolution scanning electron microscope. The local texture, grain size, amount of phase and grain boundaries, were characterized by Electron Backscatter Diffraction (EBSD). The average grain size perpendicular to the grain growth direction was 400 nm. Parallel to it, a pronounced bimodal grain structure was observed with grains reaching more than 10 μm and grains of approximately 800 nm diameter.


2011 ◽  
Vol 1324 ◽  
Author(s):  
H.R. Moutinho ◽  
R.G. Dhere ◽  
C.-S. Jiang ◽  
M.M. Al-Jassim

ABSTRACTElectron backscatter diffraction (EBSD) provides information on the crystallographic structure of a sample, while scanning Kelvin probe microscopy (SKPM) provides information on its electrical properties. The advantage of these techniques is their high spatial resolution, which cannot be attained with any other techniques. However, because these techniques analyze the top layers of the sample, surface or cross section features directly influence the results of the measurements, and sample preparation is a main step in the analysis.In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe films. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.


2007 ◽  
Vol 546-549 ◽  
pp. 885-888
Author(s):  
Yu Xuan Du ◽  
Xin Ming Zhang ◽  
Ling Ying Ye ◽  
Zhi Hui Luo

A novel shear-deformation technique, named ‘shear pressing’ (SP), was developed for fabrication of plate-shaped fine grained metallic materials. The principle of SP is that a material is subjected to shear deformation by utilizing pressing with inclined plane dies. A micrometer order grain structure was obtained in an Al-Mg-Li alloy at strain of ε = -2.3 by utilizing this technique. The grain refinement sequences during pressing were examined by electron backscatter diffraction. The enhancement of grain refinement to the Al-Mg-Li alloy was compared with plane strain compression (PSC) at similar strains. The effect of the shear strain on the accelerated grain refining during compressing has been discussed.


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